Ion implantation was used to incorporate deuterium at the Si-SiO2 interface. Polycrystalline silicon gate metal-oxide-semiconductor diodes with 4 nm oxide grown on deuterium-implanted p-type (100) silicon substrate were investigated. It was observed that deuterium implantation at a light dose of 1 × 1014/cm2 at 25 keV reduced oxide leakage current due to reduction in oxide charge and interface traps. Low-energy implant indicates possible deuterium loss during oxidation whereas in case of higher energy implant, the observed degradation was caused by enhanced substrate damage. Interface state density Dit as obtained from the conductance measurements suggests that implanted deuterium passivates the interface traps.
|Original language||English (US)|
|Number of pages||3|
|Journal||Applied Physics Letters|
|State||Published - May 22 2000|
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)