Metal-oxide-silicon diodes on deuterium-implanted silicon substrate

D. Misra, R. K. Jarwal

Research output: Contribution to journalArticlepeer-review

4 Scopus citations

Abstract

Ion implantation was used to incorporate deuterium at the Si-SiO2 interface. Polycrystalline silicon gate metal-oxide-semiconductor diodes with 4 nm oxide grown on deuterium-implanted p-type (100) silicon substrate were investigated. It was observed that deuterium implantation at a light dose of 1 × 1014/cm2 at 25 keV reduced oxide leakage current due to reduction in oxide charge and interface traps. Low-energy implant indicates possible deuterium loss during oxidation whereas in case of higher energy implant, the observed degradation was caused by enhanced substrate damage. Interface state density Dit as obtained from the conductance measurements suggests that implanted deuterium passivates the interface traps.

Original languageEnglish (US)
Pages (from-to)3076-3078
Number of pages3
JournalApplied Physics Letters
Volume76
Issue number21
DOIs
StatePublished - May 22 2000

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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