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Metal-oxide-silicon diodes on deuterium-implanted silicon substrate
D. Misra
, R. K. Jarwal
Electrical and Computer Engineering
Research output
:
Contribution to journal
›
Article
›
peer-review
5
Scopus citations
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Keyphrases
Silicon Substrate
100%
Deuterium
100%
Metal Oxide
100%
Silicon Diode
100%
Implanted Silicon
100%
Interface Traps
40%
High Energy
20%
Low Energy
20%
Oxides
20%
P-type
20%
Ion Implantation
20%
Oxide Interfaces
20%
Si-SiO2 Interface
20%
(100) Silicon
20%
Leakage Current
20%
Polysilicon
20%
Interface State Density
20%
Charge Trapping
20%
Metal Oxide Semiconductor
20%
Light Dose
20%
Deuterium Implantation
20%
Oxide Charge
20%
Conductance Measurement
20%
Passivated
20%
Semiconductor Diodes
20%
Gate Metal
20%
Reduced Oxides
20%
Engineering
Implant
100%
Silicon Substrate
100%
Interface Trap
100%
Silicon Oxide
100%
Ion Implantation
50%
Polysilicon
50%
Interface State
50%
Metal Oxide Semiconductor
50%
Chemistry
Silicon
100%
Metal Oxide
100%
Deuterium(.)
100%
Implant
33%
Interface Trap
33%
Conductance
16%
Ion Implantation
16%
Leakage Current
16%
Interface State
16%
Material Science
Silicon
100%
Metal Oxide
100%
Deuterium
100%
Oxide Compound
50%
Density
16%
Ion Implantation
16%
Oxidation Reaction
16%
Oxide Semiconductor
16%