Metrology of scattering with angular limitation projection electron lithography masks

J. A. Liddle; M. I. Blakey; T. Saunders; R. C. Farrow; L. A. Fetter; C. S. Knurek; R. Kasica; A. E. Novembre; M. L. Peabody; D. M. Tennant; D. L. Windt; M. Postek

doi:10.1116/1.589613

Metrology of scattering with angular limitation projection electron lithography masks

J. A. Liddle, M. I. Blakey, T. Saunders, R. C. Farrow, L. A. Fetter, C. S. Knurek, R. Kasica, A. E. Novembre, M. L. Peabody, D. M. Tennant, D. L. Windt, M. Postek

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

Mask metrology is a vital part of any lithographic technology, both for control of the mask patterning process and also for ensuring that the contribution of the mask to the system error budget is within acceptable limits. For design rules of 0.13 μm and below, errors arising from metrology must be kept to less than 1 nm. We have examined the potential for achieving this, in the case of scattering with angular limitation projection electron lithography (SCALPEL) masks, by using high-energy (100 keV) electron transmission measurements. We have also performed extensive metrology using conventional scanning electron microscope techniques. These results show that the SCALPEL mask has the potential to meet the specifications necessary for lithography at the 0.13 μm generation and beyond.

Original language	English (US)
Pages (from-to)	2197-2203
Number of pages	7
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	15
Issue number	6
DOIs	https://doi.org/10.1116/1.589613
State	Published - 1997
Externally published	Yes

All Science Journal Classification (ASJC) codes

Condensed Matter Physics
Electrical and Electronic Engineering

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Liddle, J. A., Blakey, M. I., Saunders, T., Farrow, R. C., Fetter, L. A., Knurek, C. S., Kasica, R., Novembre, A. E., Peabody, M. L., Tennant, D. M., Windt, D. L., & Postek, M. (1997). Metrology of scattering with angular limitation projection electron lithography masks. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 15(6), 2197-2203. https://doi.org/10.1116/1.589613

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title = "Metrology of scattering with angular limitation projection electron lithography masks",

abstract = "Mask metrology is a vital part of any lithographic technology, both for control of the mask patterning process and also for ensuring that the contribution of the mask to the system error budget is within acceptable limits. For design rules of 0.13 μm and below, errors arising from metrology must be kept to less than 1 nm. We have examined the potential for achieving this, in the case of scattering with angular limitation projection electron lithography (SCALPEL) masks, by using high-energy (100 keV) electron transmission measurements. We have also performed extensive metrology using conventional scanning electron microscope techniques. These results show that the SCALPEL mask has the potential to meet the specifications necessary for lithography at the 0.13 μm generation and beyond.",

author = "Liddle, {J. A.} and Blakey, {M. I.} and T. Saunders and Farrow, {R. C.} and Fetter, {L. A.} and Knurek, {C. S.} and R. Kasica and Novembre, {A. E.} and Peabody, {M. L.} and Tennant, {D. M.} and Windt, {D. L.} and M. Postek",

year = "1997",

doi = "10.1116/1.589613",

language = "English (US)",

volume = "15",

pages = "2197--2203",

journal = "Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures",

issn = "1071-1023",

publisher = "AVS Science and Technology Society",

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Liddle, JA, Blakey, MI, Saunders, T, Farrow, RC, Fetter, LA, Knurek, CS, Kasica, R, Novembre, AE, Peabody, ML, Tennant, DM, Windt, DL & Postek, M 1997, 'Metrology of scattering with angular limitation projection electron lithography masks', Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, vol. 15, no. 6, pp. 2197-2203. https://doi.org/10.1116/1.589613

TY - JOUR

T1 - Metrology of scattering with angular limitation projection electron lithography masks

AU - Liddle, J. A.

AU - Blakey, M. I.

AU - Saunders, T.

AU - Farrow, R. C.

AU - Fetter, L. A.

AU - Knurek, C. S.

AU - Kasica, R.

AU - Novembre, A. E.

AU - Peabody, M. L.

AU - Tennant, D. M.

AU - Windt, D. L.

AU - Postek, M.

PY - 1997

Y1 - 1997

N2 - Mask metrology is a vital part of any lithographic technology, both for control of the mask patterning process and also for ensuring that the contribution of the mask to the system error budget is within acceptable limits. For design rules of 0.13 μm and below, errors arising from metrology must be kept to less than 1 nm. We have examined the potential for achieving this, in the case of scattering with angular limitation projection electron lithography (SCALPEL) masks, by using high-energy (100 keV) electron transmission measurements. We have also performed extensive metrology using conventional scanning electron microscope techniques. These results show that the SCALPEL mask has the potential to meet the specifications necessary for lithography at the 0.13 μm generation and beyond.

AB - Mask metrology is a vital part of any lithographic technology, both for control of the mask patterning process and also for ensuring that the contribution of the mask to the system error budget is within acceptable limits. For design rules of 0.13 μm and below, errors arising from metrology must be kept to less than 1 nm. We have examined the potential for achieving this, in the case of scattering with angular limitation projection electron lithography (SCALPEL) masks, by using high-energy (100 keV) electron transmission measurements. We have also performed extensive metrology using conventional scanning electron microscope techniques. These results show that the SCALPEL mask has the potential to meet the specifications necessary for lithography at the 0.13 μm generation and beyond.

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ER -

Metrology of scattering with angular limitation projection electron lithography masks

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