Micro-X-ray fluorescence and micro-photoluminescence in InGaAsP and InGaAs layers obtained by selective area growth

A. A. Sirenko, C. L. Reynolds, L. J. Peticolas, A. Ougazzaden, A. Kazimirov, Rong Huang, E. Fontes, D. Bilderback

Research output: Contribution to journalArticlepeer-review

10 Scopus citations

Abstract

Properties of selective-area-grown (SAG) ternary and quaternary layers of InGaAs and InGaAsP produced by metal organic vapor phase epitaxy (MOVPE) have been investigated by using a combination of micro-photoluminescence and synchrotron-based micro-beam X-ray fluorescence techniques. Significant variations of the group-III element composition with increase of the oxide mask width and with decrease of the gap between the masks were observed in both ternary and quaternary layers. In contrast, concentration of the group-V elements in quaternary layers does not show any significant change. Effects of the SAG growth on variations of the group-III element composition become more pronounced with increase of the growth pressure.

Original languageEnglish (US)
Pages (from-to)38-45
Number of pages8
JournalJournal of Crystal Growth
Volume253
Issue number1-4
DOIs
StatePublished - Jun 2003
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

Keywords

  • A1. Synchrotron radiation
  • A1. X-ray fluorescence
  • A3. Metalorganic vapor phase epitaxy
  • A3. Selective epitaxy
  • B1. InGaAsP-InP
  • B2. Semiconducting quaternary alloys

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