Micro-X-ray fluorescence and micro-photoluminescence in InGaAsP and InGaAs layers obtained by selective area growth

A. A. Sirenko; C. L. Reynolds; L. J. Peticolas; A. Ougazzaden; A. Kazimirov; Rong Huang; E. Fontes; D. Bilderback

doi:10.1016/S0022-0248(03)00996-5

Micro-X-ray fluorescence and micro-photoluminescence in InGaAsP and InGaAs layers obtained by selective area growth

A. A. Sirenko, C. L. Reynolds, L. J. Peticolas, A. Ougazzaden, A. Kazimirov, Rong Huang, E. Fontes, D. Bilderback

Research output: Contribution to journal › Article › peer-review

10 Scopus citations

Abstract

Properties of selective-area-grown (SAG) ternary and quaternary layers of InGaAs and InGaAsP produced by metal organic vapor phase epitaxy (MOVPE) have been investigated by using a combination of micro-photoluminescence and synchrotron-based micro-beam X-ray fluorescence techniques. Significant variations of the group-III element composition with increase of the oxide mask width and with decrease of the gap between the masks were observed in both ternary and quaternary layers. In contrast, concentration of the group-V elements in quaternary layers does not show any significant change. Effects of the SAG growth on variations of the group-III element composition become more pronounced with increase of the growth pressure.

Original language	English (US)
Pages (from-to)	38-45
Number of pages	8
Journal	Journal of Crystal Growth
Volume	253
Issue number	1-4
DOIs	https://doi.org/10.1016/S0022-0248(03)00996-5
State	Published - Jun 2003
Externally published	Yes

All Science Journal Classification (ASJC) codes

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

Keywords

A1. Synchrotron radiation
A1. X-ray fluorescence
A3. Metalorganic vapor phase epitaxy
A3. Selective epitaxy
B1. InGaAsP-InP
B2. Semiconducting quaternary alloys

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10.1016/S0022-0248(03)00996-5

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@article{e1264924340f4f08bdf39f9b9ed9174b,

title = "Micro-X-ray fluorescence and micro-photoluminescence in InGaAsP and InGaAs layers obtained by selective area growth",

abstract = "Properties of selective-area-grown (SAG) ternary and quaternary layers of InGaAs and InGaAsP produced by metal organic vapor phase epitaxy (MOVPE) have been investigated by using a combination of micro-photoluminescence and synchrotron-based micro-beam X-ray fluorescence techniques. Significant variations of the group-III element composition with increase of the oxide mask width and with decrease of the gap between the masks were observed in both ternary and quaternary layers. In contrast, concentration of the group-V elements in quaternary layers does not show any significant change. Effects of the SAG growth on variations of the group-III element composition become more pronounced with increase of the growth pressure.",

keywords = "A1. Synchrotron radiation, A1. X-ray fluorescence, A3. Metalorganic vapor phase epitaxy, A3. Selective epitaxy, B1. InGaAsP-InP, B2. Semiconducting quaternary alloys",

author = "Sirenko, {A. A.} and Reynolds, {C. L.} and Peticolas, {L. J.} and A. Ougazzaden and A. Kazimirov and Rong Huang and E. Fontes and D. Bilderback",

note = "Funding Information: The authors gratefully acknowledge M. Hybertsen, K.E. Lutterodt, S. Ustin, and R. Leibenguth for help and useful discussions. This work is based upon research conducted at the Cornell High Energy Synchrotron Source (CHESS), which is supported by the National Science Foundation and the National Institutes of Health/National Institute of General Medical Sciences under award DMR 9713424. Copyright: Copyright 2004 Elsevier Science B.V., Amsterdam. All rights reserved.",

year = "2003",

month = jun,

doi = "10.1016/S0022-0248(03)00996-5",

language = "English (US)",

volume = "253",

pages = "38--45",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

publisher = "Elsevier B.V.",

number = "1-4",

}

TY - JOUR

T1 - Micro-X-ray fluorescence and micro-photoluminescence in InGaAsP and InGaAs layers obtained by selective area growth

AU - Sirenko, A. A.

AU - Reynolds, C. L.

AU - Peticolas, L. J.

AU - Ougazzaden, A.

AU - Kazimirov, A.

AU - Huang, Rong

AU - Fontes, E.

AU - Bilderback, D.

N1 - Funding Information: The authors gratefully acknowledge M. Hybertsen, K.E. Lutterodt, S. Ustin, and R. Leibenguth for help and useful discussions. This work is based upon research conducted at the Cornell High Energy Synchrotron Source (CHESS), which is supported by the National Science Foundation and the National Institutes of Health/National Institute of General Medical Sciences under award DMR 9713424. Copyright: Copyright 2004 Elsevier Science B.V., Amsterdam. All rights reserved.

PY - 2003/6

Y1 - 2003/6

N2 - Properties of selective-area-grown (SAG) ternary and quaternary layers of InGaAs and InGaAsP produced by metal organic vapor phase epitaxy (MOVPE) have been investigated by using a combination of micro-photoluminescence and synchrotron-based micro-beam X-ray fluorescence techniques. Significant variations of the group-III element composition with increase of the oxide mask width and with decrease of the gap between the masks were observed in both ternary and quaternary layers. In contrast, concentration of the group-V elements in quaternary layers does not show any significant change. Effects of the SAG growth on variations of the group-III element composition become more pronounced with increase of the growth pressure.

AB - Properties of selective-area-grown (SAG) ternary and quaternary layers of InGaAs and InGaAsP produced by metal organic vapor phase epitaxy (MOVPE) have been investigated by using a combination of micro-photoluminescence and synchrotron-based micro-beam X-ray fluorescence techniques. Significant variations of the group-III element composition with increase of the oxide mask width and with decrease of the gap between the masks were observed in both ternary and quaternary layers. In contrast, concentration of the group-V elements in quaternary layers does not show any significant change. Effects of the SAG growth on variations of the group-III element composition become more pronounced with increase of the growth pressure.

KW - A1. Synchrotron radiation

KW - A1. X-ray fluorescence

KW - A3. Metalorganic vapor phase epitaxy

KW - A3. Selective epitaxy

KW - B1. InGaAsP-InP

KW - B2. Semiconducting quaternary alloys

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U2 - 10.1016/S0022-0248(03)00996-5

DO - 10.1016/S0022-0248(03)00996-5

M3 - Article

AN - SCOPUS:0037949010

SN - 0022-0248

VL - 253

SP - 38

EP - 45

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

IS - 1-4

ER -

Micro-X-ray fluorescence and micro-photoluminescence in InGaAsP and InGaAs layers obtained by selective area growth

Abstract

All Science Journal Classification (ASJC) codes

Keywords

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