Microbeam high angular resolution x-ray diffraction in InGaNGaN selective-area-grown ridge structures

A. A. Sirenko, A. Kazimirov, S. Cornaby, D. H. Bilderback, B. Neubert, P. Brückner, F. Scholz, V. Shneidman, A. Ougazzaden

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15 Scopus citations

Abstract

GaN-based 6-μm -wide ridge waveguides with InGaNGaN multiple-quantum- wells (MQWs) produced by metal organic vapor-phase epitaxy in the regime of selective-area growth have been studied with microbeam high angular resolution x-ray diffraction and reciprocal-space mapping. Variation of the strain from 0.9% to 1.05% and a factor of 3 for the thickness enhancement of the MQW period have been measured for different widths of the oxide mask surrounding the GaN-based ridges. Only when the trapezoidal shape of the ridge cross section is taken into account can the difference between the experimentally measured thickness enhancement and predictions of the long-range gas-phase diffusion model be reconciled.

Original languageEnglish (US)
Article number181926
JournalApplied Physics Letters
Volume89
Issue number18
DOIs
StatePublished - 2006

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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