Microbeam high angular resolution x-ray diffraction in InGaNGaN selective-area-grown ridge structures

A. A. Sirenko; A. Kazimirov; S. Cornaby; D. H. Bilderback; B. Neubert; P. Brückner; F. Scholz; V. Shneidman; A. Ougazzaden

doi:10.1063/1.2378558

Microbeam high angular resolution x-ray diffraction in InGaNGaN selective-area-grown ridge structures

A. A. Sirenko, A. Kazimirov, S. Cornaby, D. H. Bilderback, B. Neubert, P. Brückner, F. Scholz, V. Shneidman, A. Ougazzaden

Physics

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17 Scopus citations

Abstract

GaN-based 6-μm -wide ridge waveguides with InGaNGaN multiple-quantum- wells (MQWs) produced by metal organic vapor-phase epitaxy in the regime of selective-area growth have been studied with microbeam high angular resolution x-ray diffraction and reciprocal-space mapping. Variation of the strain from 0.9% to 1.05% and a factor of 3 for the thickness enhancement of the MQW period have been measured for different widths of the oxide mask surrounding the GaN-based ridges. Only when the trapezoidal shape of the ridge cross section is taken into account can the difference between the experimentally measured thickness enhancement and predictions of the long-range gas-phase diffusion model be reconciled.

Original language	English (US)
Article number	181926
Journal	Applied Physics Letters
Volume	89
Issue number	18
DOIs	https://doi.org/10.1063/1.2378558
State	Published - 2006

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.2378558

Cite this

@article{b9aab001be0a42e5970e13f798fb4035,

title = "Microbeam high angular resolution x-ray diffraction in InGaNGaN selective-area-grown ridge structures",

abstract = "GaN-based 6-μm -wide ridge waveguides with InGaNGaN multiple-quantum- wells (MQWs) produced by metal organic vapor-phase epitaxy in the regime of selective-area growth have been studied with microbeam high angular resolution x-ray diffraction and reciprocal-space mapping. Variation of the strain from 0.9% to 1.05% and a factor of 3 for the thickness enhancement of the MQW period have been measured for different widths of the oxide mask surrounding the GaN-based ridges. Only when the trapezoidal shape of the ridge cross section is taken into account can the difference between the experimentally measured thickness enhancement and predictions of the long-range gas-phase diffusion model be reconciled.",

author = "Sirenko, {A. A.} and A. Kazimirov and S. Cornaby and Bilderback, {D. H.} and B. Neubert and P. Br{\"u}ckner and F. Scholz and V. Shneidman and A. Ougazzaden",

note = "Funding Information: The Cornell High Energy Synchrotron Source is supported by the National Science Foundation and the National Institutes of Health/National Institute of General Medical Sciences under Award No. DMR-0225180. ",

year = "2006",

doi = "10.1063/1.2378558",

language = "English (US)",

volume = "89",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "18",

}

TY - JOUR

T1 - Microbeam high angular resolution x-ray diffraction in InGaNGaN selective-area-grown ridge structures

AU - Sirenko, A. A.

AU - Kazimirov, A.

AU - Cornaby, S.

AU - Bilderback, D. H.

AU - Neubert, B.

AU - Brückner, P.

AU - Scholz, F.

AU - Shneidman, V.

AU - Ougazzaden, A.

N1 - Funding Information: The Cornell High Energy Synchrotron Source is supported by the National Science Foundation and the National Institutes of Health/National Institute of General Medical Sciences under Award No. DMR-0225180.

PY - 2006

Y1 - 2006

N2 - GaN-based 6-μm -wide ridge waveguides with InGaNGaN multiple-quantum- wells (MQWs) produced by metal organic vapor-phase epitaxy in the regime of selective-area growth have been studied with microbeam high angular resolution x-ray diffraction and reciprocal-space mapping. Variation of the strain from 0.9% to 1.05% and a factor of 3 for the thickness enhancement of the MQW period have been measured for different widths of the oxide mask surrounding the GaN-based ridges. Only when the trapezoidal shape of the ridge cross section is taken into account can the difference between the experimentally measured thickness enhancement and predictions of the long-range gas-phase diffusion model be reconciled.

AB - GaN-based 6-μm -wide ridge waveguides with InGaNGaN multiple-quantum- wells (MQWs) produced by metal organic vapor-phase epitaxy in the regime of selective-area growth have been studied with microbeam high angular resolution x-ray diffraction and reciprocal-space mapping. Variation of the strain from 0.9% to 1.05% and a factor of 3 for the thickness enhancement of the MQW period have been measured for different widths of the oxide mask surrounding the GaN-based ridges. Only when the trapezoidal shape of the ridge cross section is taken into account can the difference between the experimentally measured thickness enhancement and predictions of the long-range gas-phase diffusion model be reconciled.

UR - http://www.scopus.com/inward/record.url?scp=33750708579&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33750708579&partnerID=8YFLogxK

U2 - 10.1063/1.2378558

DO - 10.1063/1.2378558

M3 - Article

AN - SCOPUS:33750708579

SN - 0003-6951

VL - 89

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 18

M1 - 181926

ER -

Microbeam high angular resolution x-ray diffraction in InGaNGaN selective-area-grown ridge structures

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