Microbeam high-resolution diffraction and x-ray standing wave methods applied to semiconductor structures

A. Kazimirov, D. H. Bilderback, R. Huang, A. Sirenko, A. Ougazzaden

Research output: Contribution to journalLetterpeer-review

13 Scopus citations

Abstract

A new approach to conditioning x-ray microbeams for high angular resolution x-ray diffraction and scattering techniques is introduced. We combined focusing optics (one-bounce imaging capillary) and post-focusing collimating optics (miniature Si(004) channel-cut crystal) to generate an x-ray microbeam with a size of 10 μm and ultimate angular resolution of 14 μrad. The microbeam was used to analyse the strain in sub-micron thick InGaAsP epitaxial layers grown on an InP(100) substrate by the selective area growth technique in narrow openings between the oxide stripes. For the structures for which the diffraction peaks from the substrate and the film overlap, the x-ray standing wave technique was applied for precise measurements of the strain with a Δd/d resolution of better than 10-4.

Original languageEnglish (US)
Pages (from-to)L9-L12
JournalJournal of Physics D: Applied Physics
Volume37
Issue number4
DOIs
StatePublished - Feb 21 2004

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Acoustics and Ultrasonics
  • Surfaces, Coatings and Films

Fingerprint

Dive into the research topics of 'Microbeam high-resolution diffraction and x-ray standing wave methods applied to semiconductor structures'. Together they form a unique fingerprint.

Cite this