Microscopic metal clusters and Schottky barrier formation

S. Doniach, K. K. Chin, I. Lindau, W. E. Spicer

Research output: Contribution to journalArticlepeer-review

27 Scopus citations

Abstract

A simple interpretation is given of observed logarithmic dependence of the surface Fermi level on coverage of GaAS(110) in the range 10-4 10-1 ML in terms of the charging energy of microscopic metal clusters formed during the deposition process. New data taken on films formed at low temperature suggest that the clustering process is strongly temperature dependent.

Original languageEnglish (US)
Pages (from-to)591-594
Number of pages4
JournalPhysical Review Letters
Volume58
Issue number6
DOIs
StatePublished - Jan 1 1987
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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