Microstructure and strain relaxation of orthorhombic TmMnO 3 epitaxial thin films

Y. Yu, X. Zhang, J. J. Yang, J. W. Wang, Y. G. Zhao

Research output: Contribution to journalArticlepeer-review

4 Scopus citations

Abstract

Orthorhombic TmMnO 3 (o-TMO) thin films have been epitaxially stabilized on (110) SrTiO 3 substrates by pulsed laser deposition (PLD) technique. The microstructure and strain relaxation mechanism of o-TMO thin films are analyzed using transmission electron microscopy. It is shown that major defects in the films are misfit dislocations with Burgers vectors of type a p〈010〉 and a p〈110〉, whereas a p〈110〉 dislocations tend to dissociate into partial dislocations with Burgers vectors of type 1/2a p〈110〉. Strain in o-TMO films is relaxed by misfit dislocations as well as surface fluctuations, which is different from most of the previous studies of the perovskite thin films.

Original languageEnglish (US)
Pages (from-to)280-282
Number of pages3
JournalJournal of Crystal Growth
Volume338
Issue number1
DOIs
StatePublished - Jan 1 2012
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

Keywords

  • A1. Crystal structure
  • A1. Transmission electron microscopy
  • B1. Manganites
  • B1. Perovskites
  • B2. Ferroelectric materials
  • B2. Magnetic materials

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