Microstructure and strain relaxation of orthorhombic TmMnO 3 epitaxial thin films

Y. Yu; X. Zhang; J. J. Yang; J. W. Wang; Y. G. Zhao

doi:10.1016/j.jcrysgro.2011.11.031

Microstructure and strain relaxation of orthorhombic TmMnO ₃ epitaxial thin films

Y. Yu, X. Zhang, J. J. Yang, J. W. Wang, Y. G. Zhao

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

Orthorhombic TmMnO ₃ (o-TMO) thin films have been epitaxially stabilized on (110) SrTiO ₃ substrates by pulsed laser deposition (PLD) technique. The microstructure and strain relaxation mechanism of o-TMO thin films are analyzed using transmission electron microscopy. It is shown that major defects in the films are misfit dislocations with Burgers vectors of type a _p〈010〉 and a _p〈110〉, whereas a _p〈110〉 dislocations tend to dissociate into partial dislocations with Burgers vectors of type 1/2a _p〈110〉. Strain in o-TMO films is relaxed by misfit dislocations as well as surface fluctuations, which is different from most of the previous studies of the perovskite thin films.

Original language	English (US)
Pages (from-to)	280-282
Number of pages	3
Journal	Journal of Crystal Growth
Volume	338
Issue number	1
DOIs	https://doi.org/10.1016/j.jcrysgro.2011.11.031
State	Published - Jan 1 2012
Externally published	Yes

All Science Journal Classification (ASJC) codes

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

Keywords

A1. Crystal structure
A1. Transmission electron microscopy
B1. Manganites
B1. Perovskites
B2. Ferroelectric materials
B2. Magnetic materials

Access to Document

10.1016/j.jcrysgro.2011.11.031

Cite this

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title = "Microstructure and strain relaxation of orthorhombic TmMnO 3 epitaxial thin films",

abstract = "Orthorhombic TmMnO 3 (o-TMO) thin films have been epitaxially stabilized on (110) SrTiO 3 substrates by pulsed laser deposition (PLD) technique. The microstructure and strain relaxation mechanism of o-TMO thin films are analyzed using transmission electron microscopy. It is shown that major defects in the films are misfit dislocations with Burgers vectors of type a p〈010〉 and a p〈110〉, whereas a p〈110〉 dislocations tend to dissociate into partial dislocations with Burgers vectors of type 1/2a p〈110〉. Strain in o-TMO films is relaxed by misfit dislocations as well as surface fluctuations, which is different from most of the previous studies of the perovskite thin films.",

keywords = "A1. Crystal structure, A1. Transmission electron microscopy, B1. Manganites, B1. Perovskites, B2. Ferroelectric materials, B2. Magnetic materials",

author = "Y. Yu and X. Zhang and Yang, {J. J.} and Wang, {J. W.} and Zhao, {Y. G.}",

year = "2012",

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T1 - Microstructure and strain relaxation of orthorhombic TmMnO 3 epitaxial thin films

AU - Yu, Y.

AU - Zhang, X.

AU - Yang, J. J.

AU - Wang, J. W.

AU - Zhao, Y. G.

PY - 2012/1/1

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N2 - Orthorhombic TmMnO 3 (o-TMO) thin films have been epitaxially stabilized on (110) SrTiO 3 substrates by pulsed laser deposition (PLD) technique. The microstructure and strain relaxation mechanism of o-TMO thin films are analyzed using transmission electron microscopy. It is shown that major defects in the films are misfit dislocations with Burgers vectors of type a p〈010〉 and a p〈110〉, whereas a p〈110〉 dislocations tend to dissociate into partial dislocations with Burgers vectors of type 1/2a p〈110〉. Strain in o-TMO films is relaxed by misfit dislocations as well as surface fluctuations, which is different from most of the previous studies of the perovskite thin films.

AB - Orthorhombic TmMnO 3 (o-TMO) thin films have been epitaxially stabilized on (110) SrTiO 3 substrates by pulsed laser deposition (PLD) technique. The microstructure and strain relaxation mechanism of o-TMO thin films are analyzed using transmission electron microscopy. It is shown that major defects in the films are misfit dislocations with Burgers vectors of type a p〈010〉 and a p〈110〉, whereas a p〈110〉 dislocations tend to dissociate into partial dislocations with Burgers vectors of type 1/2a p〈110〉. Strain in o-TMO films is relaxed by misfit dislocations as well as surface fluctuations, which is different from most of the previous studies of the perovskite thin films.

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KW - A1. Transmission electron microscopy

KW - B1. Manganites

KW - B1. Perovskites

KW - B2. Ferroelectric materials

KW - B2. Magnetic materials

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