Midwavelength Infrared p-n Heterojunction Diodes Based on Intraband Colloidal Quantum Dots

Shihab Bin Hafiz, Mohammad M. Al Mahfuz, Sunghwan Lee, Dong Kyun Ko

Research output: Contribution to journalArticlepeer-review

17 Scopus citations


As an emerging member of the colloidal semiconductor quantum dot materials family, intraband quantum dots are being extensively studied for thermal infrared sensing applications. High-performance detectors can be realized using a traditional p-n junction device design; however, the heavily doped nature of intraband quantum dots presents a new challenge in realizing diode devices. In this work, we utilize a trait uniquely available in a colloidal quantum dot material system to overcome this challenge: the ability to blend two different types of quantum dots to control the electrical property of the resulting film. We report on the preparation of binary mixture films containing midwavelength infrared Ag2Se intraband quantum dots and the fabrication of p-n heterojunction diodes with strong rectifying characteristics. The peak specific detectivity at 4.5 μm was measured to be 107 Jones at room temperature, which is an orders of magnitude improvement compared to the previous generation of intraband quantum dot detectors.

Original languageEnglish (US)
Pages (from-to)49043-49049
Number of pages7
JournalACS Applied Materials and Interfaces
Issue number41
StatePublished - Oct 20 2021

All Science Journal Classification (ASJC) codes

  • General Materials Science


  • colloidal quantum dots
  • intraband
  • midwavelength infrared
  • photodiode
  • silver selenide


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