Minority-carrier life-time in polycrystalline semiconductors—some analytical considerations

B. Prasad; N. M. Ravindra

doi:10.1080/00207218608920794

Minority-carrier life-time in polycrystalline semiconductors—some analytical considerations

B. Prasad, N. M. Ravindra

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

Analytical expressions governing the minority-carrier lifetime at the grain boundary surface and in the bulk region of the semiconductor have been derived. The well known Shockley-Read-Hall statistics for the carrier generation-recombination kinetics has been employed for this analysis. The present study has essentially been made for large-grained polycrystalline semiconductors and should prove useful in photovoltaic and switching applications.

Original language	English (US)
Pages (from-to)	381-394
Number of pages	14
Journal	International Journal of Electronics
Volume	60
Issue number	3
DOIs	https://doi.org/10.1080/00207218608920794
State	Published - Mar 1986
Externally published	Yes

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering

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10.1080/00207218608920794

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title = "Minority-carrier life-time in polycrystalline semiconductors—some analytical considerations",

abstract = "Analytical expressions governing the minority-carrier lifetime at the grain boundary surface and in the bulk region of the semiconductor have been derived. The well known Shockley-Read-Hall statistics for the carrier generation-recombination kinetics has been employed for this analysis. The present study has essentially been made for large-grained polycrystalline semiconductors and should prove useful in photovoltaic and switching applications.",

author = "B. Prasad and Ravindra, {N. M.}",

note = "Funding Information: We are grateful to Professor F. Demichelis, Director of Dipartimento di Fisica, Politecnico di Torino, for fruitful discussions. One of the authors (N.M.R.) acknowledges with thanks the financial support of the International Center for Theoretical Physics (Trieste) under its 'Training and Research in Italian Laboratories' scheme.",

year = "1986",

month = mar,

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language = "English (US)",

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T1 - Minority-carrier life-time in polycrystalline semiconductors—some analytical considerations

AU - Prasad, B.

AU - Ravindra, N. M.

N1 - Funding Information: We are grateful to Professor F. Demichelis, Director of Dipartimento di Fisica, Politecnico di Torino, for fruitful discussions. One of the authors (N.M.R.) acknowledges with thanks the financial support of the International Center for Theoretical Physics (Trieste) under its 'Training and Research in Italian Laboratories' scheme.

PY - 1986/3

Y1 - 1986/3

N2 - Analytical expressions governing the minority-carrier lifetime at the grain boundary surface and in the bulk region of the semiconductor have been derived. The well known Shockley-Read-Hall statistics for the carrier generation-recombination kinetics has been employed for this analysis. The present study has essentially been made for large-grained polycrystalline semiconductors and should prove useful in photovoltaic and switching applications.

AB - Analytical expressions governing the minority-carrier lifetime at the grain boundary surface and in the bulk region of the semiconductor have been derived. The well known Shockley-Read-Hall statistics for the carrier generation-recombination kinetics has been employed for this analysis. The present study has essentially been made for large-grained polycrystalline semiconductors and should prove useful in photovoltaic and switching applications.

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DO - 10.1080/00207218608920794

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JO - International Journal of Electronics

JF - International Journal of Electronics

IS - 3

ER -

Minority-carrier life-time in polycrystalline semiconductors—some analytical considerations

Abstract

All Science Journal Classification (ASJC) codes

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