Analytical expressions governing the minority-carrier lifetime at the grain boundary surface and in the bulk region of the semiconductor have been derived. The well known Shockley-Read-Hall statistics for the carrier generation-recombination kinetics has been employed for this analysis. The present study has essentially been made for large-grained polycrystalline semiconductors and should prove useful in photovoltaic and switching applications.
All Science Journal Classification (ASJC) codes
- Electrical and Electronic Engineering