Minority-carrier life-time in polycrystalline semiconductors—some analytical considerations

B. Prasad, N. M. Ravindra

Research output: Contribution to journalArticlepeer-review

Abstract

Analytical expressions governing the minority-carrier lifetime at the grain boundary surface and in the bulk region of the semiconductor have been derived. The well known Shockley-Read-Hall statistics for the carrier generation-recombination kinetics has been employed for this analysis. The present study has essentially been made for large-grained polycrystalline semiconductors and should prove useful in photovoltaic and switching applications.

Original languageEnglish (US)
Pages (from-to)381-394
Number of pages14
JournalInternational Journal of Electronics
Volume60
Issue number3
DOIs
StatePublished - Mar 1986
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

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