Modeling and simulation of 1/f noise during threshold switching for phase change memory

Rutu Parekh, Maryam Shojaei Baghini, Bipin Rajendran

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

In phase change memory (PCM), the threshold switching effect contributes to the programming speed and can cause undesirable disturbs during the read operation. The impact of 1/f noise fluctuations on the transient switching is crucial in designing the read/program conditions and to estimate the programming times and read disturb probability. In this work, we have developed a VerilogA compact model build on analytical model for subthreshold conduction and threshold switching in amorphous chalcogenide with the effect of 1/f noise. The model is simulated in Cadence environment to study the effect on delay and switching time for applied voltage along with investigation of PCM device scaling on threshold voltage and programming speed.

Original languageEnglish (US)
Title of host publicationAdvanced Computational and Communication Paradigms - Proceedings of International Conference on ICACCP 2017
EditorsSiddhartha Bhattacharyya, Tapan Gandhi, Kalpana Sharma, Paramartha Dutta
PublisherSpringer Verlag
Pages77-83
Number of pages7
ISBN (Print)9789811082399
DOIs
StatePublished - Jan 1 2018
Event1st International Conference on Advanced Computational and Communication Paradigms, ICACCP 2017 - Majitar, India
Duration: Sep 8 2017Sep 10 2017

Publication series

NameLecture Notes in Electrical Engineering
Volume475
ISSN (Print)1876-1100
ISSN (Electronic)1876-1119

Other

Other1st International Conference on Advanced Computational and Communication Paradigms, ICACCP 2017
CountryIndia
CityMajitar
Period9/8/179/10/17

All Science Journal Classification (ASJC) codes

  • Industrial and Manufacturing Engineering

Keywords

  • 1/f noise
  • Phase change memory (PCM)
  • Simulation

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