Modeling and simulation of drain current 1/f noise in high-κ based n-MOSFETs

Keyphrases

• NMOSFET 100%
• Drain Current 100%
• Highest Layer 66%
• Interfacial Layer 66%
• Physics-based Model 33%
• Energy Levels 33%
• High-k Dielectric 33%
• Dielectric 33%
• Oxides 33%
• Noise Level 33%
• Tunneling 33%
• Gate Oxide 33%
• Thermally Activated Processes 33%
• Constant Parameters 33%
• Drain Current Noise 33%
• Tunneling Time 33%
• Time Attenuation 33%
• Trap-assisted 33%
• Attenuation Parameters 33%
• Margin Level 33%

Engineering

• Metal-Oxide-Semiconductor Field-Effect Transistor 100%
• Current Drain 100%
• Dielectrics 50%
• Tunnel Construction 50%
• Interfacial Layer 50%
• Simulation Result 25%
• Experimental Result 25%
• Noise Level 25%
• Gate Oxide 25%
• Constant Time 25%
• Acceptable Margin 25%
• Estimated Value 25%