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Modeling of boron and phosphorus implantation into (100) germanium
Y. S. Suh
, M. S. Carroll
,
R. A. Levy
, M. A. Sahiner
, G. Bisognin
, C. A. King
Physics
Research output
:
Contribution to journal
›
Article
›
peer-review
36
Scopus citations
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Keyphrases
Germanium
100%
Boron Implantation
100%
Phosphorus Implantation
100%
Phosphorus
60%
Boron
40%
High Dose
20%
Energy Range
20%
Monte Carlo Simulation
20%
Subsequent Annealing
20%
Nuclear Reaction Analysis
20%
Cm(III)
20%
Secondary Ion Mass Spectrometry
20%
Spreading Resistance Profiling
20%
First Four Moments
20%
Rapid Simulation
20%
Projected Range
20%
Ion Dose
20%
Pearson Distribution
20%
Hole Concentration
20%
Distribution Fitting
20%
Second Moment
20%
Earth and Planetary Sciences
Pearson Distributions
100%
Secondary Ion Mass Spectrometry
100%
Channelling
100%
Nuclear Reaction
100%
Material Science
Germanium
100%
Boron
100%
Silicon
50%
Annealing
16%
Secondary Ion Mass Spectrometry
16%
Hole Concentration
16%
Physics
Monte Carlo Simulation
100%
Secondary Ion Mass Spectrometry
100%
Nuclear Reaction
100%