Modeling, simulation and control of single wafer process in cluster tool base on FT-IR IN-line sensor

Shaohua Liu; Peter Solomon; R. Carpio; B. Fowler; D. Simmons; J. Wang; R. Wise; G. Imper; N. B. Riley; M. Moslehi; N. M. Ravindra

doi:10.1557/proc-387-87

Modeling, simulation and control of single wafer process in cluster tool base on FT-IR IN-line sensor

Shaohua Liu, Peter Solomon, R. Carpio, B. Fowler, D. Simmons, J. Wang, R. Wise, G. Imper, N. B. Riley, M. Moslehi, N. M. Ravindra

Research output: Contribution to journal › Conference article › peer-review

1 Scopus citations

Abstract

This paper outlines our current approach to utilize infrared reflectance spectroscopy for thin film measurement in the semiconductor industry. The multi-layer thickness and doping concentration of IC wafers can be determined by a single angle, unpolarized infrared reflectance measurement performed using Fourier transform infrared spectrometer. A computer algorithm, which matches theoretical to measured infrared reflectance spectra, was successfully employed to determine multiple thin film properties.

Original language	English (US)
Pages (from-to)	87-92
Number of pages	6
Journal	Materials Research Society Symposium - Proceedings
Volume	387
DOIs	https://doi.org/10.1557/proc-387-87
State	Published - 1995
Externally published	Yes
Event	Proceedings of the 1995 MRS Spring Meeting - San Francisco, CA, USA Duration: Apr 17 1995 → Apr 21 1995

All Science Journal Classification (ASJC) codes

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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10.1557/proc-387-87

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@article{3534e6a18c4e4fd293b9430138bbe83b,

title = "Modeling, simulation and control of single wafer process in cluster tool base on FT-IR IN-line sensor",

abstract = "This paper outlines our current approach to utilize infrared reflectance spectroscopy for thin film measurement in the semiconductor industry. The multi-layer thickness and doping concentration of IC wafers can be determined by a single angle, unpolarized infrared reflectance measurement performed using Fourier transform infrared spectrometer. A computer algorithm, which matches theoretical to measured infrared reflectance spectra, was successfully employed to determine multiple thin film properties.",

author = "Shaohua Liu and Peter Solomon and R. Carpio and B. Fowler and D. Simmons and J. Wang and R. Wise and G. Imper and Riley, {N. B.} and M. Moslehi and Ravindra, {N. M.}",

year = "1995",

doi = "10.1557/proc-387-87",

language = "English (US)",

volume = "387",

pages = "87--92",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

publisher = "Materials Research Society",

note = "Proceedings of the 1995 MRS Spring Meeting ; Conference date: 17-04-1995 Through 21-04-1995",

}

TY - JOUR

T1 - Modeling, simulation and control of single wafer process in cluster tool base on FT-IR IN-line sensor

AU - Liu, Shaohua

AU - Solomon, Peter

AU - Carpio, R.

AU - Fowler, B.

AU - Simmons, D.

AU - Wang, J.

AU - Wise, R.

AU - Imper, G.

AU - Riley, N. B.

AU - Moslehi, M.

AU - Ravindra, N. M.

PY - 1995

Y1 - 1995

N2 - This paper outlines our current approach to utilize infrared reflectance spectroscopy for thin film measurement in the semiconductor industry. The multi-layer thickness and doping concentration of IC wafers can be determined by a single angle, unpolarized infrared reflectance measurement performed using Fourier transform infrared spectrometer. A computer algorithm, which matches theoretical to measured infrared reflectance spectra, was successfully employed to determine multiple thin film properties.

AB - This paper outlines our current approach to utilize infrared reflectance spectroscopy for thin film measurement in the semiconductor industry. The multi-layer thickness and doping concentration of IC wafers can be determined by a single angle, unpolarized infrared reflectance measurement performed using Fourier transform infrared spectrometer. A computer algorithm, which matches theoretical to measured infrared reflectance spectra, was successfully employed to determine multiple thin film properties.

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UR - http://www.scopus.com/inward/citedby.url?scp=0029477803&partnerID=8YFLogxK

U2 - 10.1557/proc-387-87

DO - 10.1557/proc-387-87

M3 - Conference article

AN - SCOPUS:0029477803

SN - 0272-9172

VL - 387

SP - 87

EP - 92

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

T2 - Proceedings of the 1995 MRS Spring Meeting

Y2 - 17 April 1995 through 21 April 1995

ER -

Modeling, simulation and control of single wafer process in cluster tool base on FT-IR IN-line sensor

Abstract

All Science Journal Classification (ASJC) codes

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