Modeling, simulation and control of single wafer process in cluster tool base on FT-IR IN-line sensor

Shaohua Liu, Peter Solomon, R. Carpio, B. Fowler, D. Simmons, J. Wang, R. Wise, G. Imper, N. B. Riley, M. Moslehi, N. M. Ravindra

Research output: Contribution to journalConference articlepeer-review

1 Scopus citations

Abstract

This paper outlines our current approach to utilize infrared reflectance spectroscopy for thin film measurement in the semiconductor industry. The multi-layer thickness and doping concentration of IC wafers can be determined by a single angle, unpolarized infrared reflectance measurement performed using Fourier transform infrared spectrometer. A computer algorithm, which matches theoretical to measured infrared reflectance spectra, was successfully employed to determine multiple thin film properties.

Original languageEnglish (US)
Pages (from-to)87-92
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Volume387
DOIs
StatePublished - 1995
Externally publishedYes
EventProceedings of the 1995 MRS Spring Meeting - San Francisco, CA, USA
Duration: Apr 17 1995Apr 21 1995

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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