Modeling, simulation and control of single wafer process in cluster tool base on FT-IR in-line sensor

Shaohua Liu; Peter Solomon; R. Carpio; B. Fowler; D. Simmons; J. Wang; R. Wise; G. Imper; N. B. Riley; M. Moslehi; N. M. Ravindra

doi:10.1557/proc-389-269

Modeling, simulation and control of single wafer process in cluster tool base on FT-IR in-line sensor

Shaohua Liu, Peter Solomon, R. Carpio, B. Fowler, D. Simmons, J. Wang, R. Wise, G. Imper, N. B. Riley, M. Moslehi, N. M. Ravindra

Research output: Contribution to journal › Conference article › peer-review

2 Scopus citations

Abstract

This paper outlines our current approach to utilize infrared reflectance spectroscopy for thin film measurement in the semiconductor industry. The multi-layer thickness and doping concentration of IC wafers can be determined by a single angle, unpolarized infrared reflectance measurement performed using Fourier transform infrared spectrometer. A computer algorithm, which matches theoretical to measured infrared reflectance spectra, was successfully employed to determine multiple thin film properties.

Original language	English (US)
Pages (from-to)	269-274
Number of pages	6
Journal	Materials Research Society Symposium - Proceedings
Volume	389
DOIs	https://doi.org/10.1557/proc-389-269
State	Published - 1995
Externally published	Yes
Event	Proceedings of the Spring Meeting on MRS - San Francisco, CA, USA Duration: Apr 17 1995 → Apr 20 1995

All Science Journal Classification (ASJC) codes

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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10.1557/proc-389-269

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@article{14cbbb4a5f2944f3a754544aca328ba9,

title = "Modeling, simulation and control of single wafer process in cluster tool base on FT-IR in-line sensor",

abstract = "This paper outlines our current approach to utilize infrared reflectance spectroscopy for thin film measurement in the semiconductor industry. The multi-layer thickness and doping concentration of IC wafers can be determined by a single angle, unpolarized infrared reflectance measurement performed using Fourier transform infrared spectrometer. A computer algorithm, which matches theoretical to measured infrared reflectance spectra, was successfully employed to determine multiple thin film properties.",

author = "Shaohua Liu and Peter Solomon and R. Carpio and B. Fowler and D. Simmons and J. Wang and R. Wise and G. Imper and Riley, \{N. B.\} and M. Moslehi and Ravindra, \{N. M.\}",

year = "1995",

doi = "10.1557/proc-389-269",

language = "English (US)",

volume = "389",

pages = "269--274",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

publisher = "Materials Research Society",

note = "Proceedings of the Spring Meeting on MRS ; Conference date: 17-04-1995 Through 20-04-1995",

}

TY - JOUR

T1 - Modeling, simulation and control of single wafer process in cluster tool base on FT-IR in-line sensor

AU - Liu, Shaohua

AU - Solomon, Peter

AU - Carpio, R.

AU - Fowler, B.

AU - Simmons, D.

AU - Wang, J.

AU - Wise, R.

AU - Imper, G.

AU - Riley, N. B.

AU - Moslehi, M.

AU - Ravindra, N. M.

PY - 1995

Y1 - 1995

N2 - This paper outlines our current approach to utilize infrared reflectance spectroscopy for thin film measurement in the semiconductor industry. The multi-layer thickness and doping concentration of IC wafers can be determined by a single angle, unpolarized infrared reflectance measurement performed using Fourier transform infrared spectrometer. A computer algorithm, which matches theoretical to measured infrared reflectance spectra, was successfully employed to determine multiple thin film properties.

AB - This paper outlines our current approach to utilize infrared reflectance spectroscopy for thin film measurement in the semiconductor industry. The multi-layer thickness and doping concentration of IC wafers can be determined by a single angle, unpolarized infrared reflectance measurement performed using Fourier transform infrared spectrometer. A computer algorithm, which matches theoretical to measured infrared reflectance spectra, was successfully employed to determine multiple thin film properties.

UR - https://www.scopus.com/pages/publications/0029193704

UR - https://www.scopus.com/inward/citedby.url?scp=0029193704&partnerID=8YFLogxK

U2 - 10.1557/proc-389-269

DO - 10.1557/proc-389-269

M3 - Conference article

AN - SCOPUS:0029193704

SN - 0272-9172

VL - 389

SP - 269

EP - 274

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

T2 - Proceedings of the Spring Meeting on MRS

Y2 - 17 April 1995 through 20 April 1995

ER -

Modeling, simulation and control of single wafer process in cluster tool base on FT-IR in-line sensor

Abstract

All Science Journal Classification (ASJC) codes

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