Molecular beam epitaxial growth and characterization of InGaN/GaN dot-in-a-wire nanoscale heterostructures: Toward ultrahigh efficiency phosphor-free white light emitting diodes

Zetian Mi; Hieu Pham Trung Nguyen; Shaofei Zhang; Kai Cui; Mehrdad Djavid

doi:10.1117/12.2004498

Molecular beam epitaxial growth and characterization of InGaN/GaN dot-in-a-wire nanoscale heterostructures: Toward ultrahigh efficiency phosphor-free white light emitting diodes

Zetian Mi, Hieu Pham Trung Nguyen, Shaofei Zhang, Kai Cui, Mehrdad Djavid

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

6 Scopus citations

Abstract

One of the grand challenges for future solid state lighting is the development of high efficiency, phosphor-free white light emitting diodes (LEDs). In this context, we have investigated the molecular beam epitaxial growth and characterization of nanowire LEDs on Si, wherein intrinsic white-light emission is achieved by incorporating selforganized InGaN quantum dots in defect-free GaN nanowires on a single chip. We have further demonstrated that, with the incorporation of p-type modulation doping and AlGaN electron blocking layer, InGaN/GaN dot-in-a-wire white LEDs can exhibit nearly zero efficiency droop and significantly enhanced internal quantum efficiency (up to ∼57%) at room-temperature.

Original language	English (US)
Title of host publication	Quantum Dots and Nanostructures
Subtitle of host publication	Synthesis, Characterization, and Modeling X
DOIs	https://doi.org/10.1117/12.2004498
State	Published - 2013
Externally published	Yes
Event	Quantum Dots and Nanostructures: Synthesis, Characterization, and Modeling X - San Francisco, CA, United States Duration: Feb 4 2013 → Feb 6 2013

Publication series

Name	Proceedings of SPIE - The International Society for Optical Engineering
Volume	8634
ISSN (Print)	0277-786X

Other

Other	Quantum Dots and Nanostructures: Synthesis, Characterization, and Modeling X
Country/Territory	United States
City	San Francisco, CA
Period	2/4/13 → 2/6/13

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Computer Science Applications
Applied Mathematics
Electrical and Electronic Engineering

Keywords

And gallium nitride
Light emitting diodes
Molecular beam epitaxy
Nanowire

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10.1117/12.2004498

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Mi, Z., Nguyen, H. P. T., Zhang, S., Cui, K., & Djavid, M. (2013). Molecular beam epitaxial growth and characterization of InGaN/GaN dot-in-a-wire nanoscale heterostructures: Toward ultrahigh efficiency phosphor-free white light emitting diodes. In Quantum Dots and Nanostructures: Synthesis, Characterization, and Modeling X Article 86340B (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 8634). https://doi.org/10.1117/12.2004498

Mi, Zetian ; Nguyen, Hieu Pham Trung ; Zhang, Shaofei et al. / Molecular beam epitaxial growth and characterization of InGaN/GaN dot-in-a-wire nanoscale heterostructures : Toward ultrahigh efficiency phosphor-free white light emitting diodes. Quantum Dots and Nanostructures: Synthesis, Characterization, and Modeling X. 2013. (Proceedings of SPIE - The International Society for Optical Engineering).

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title = "Molecular beam epitaxial growth and characterization of InGaN/GaN dot-in-a-wire nanoscale heterostructures: Toward ultrahigh efficiency phosphor-free white light emitting diodes",

abstract = "One of the grand challenges for future solid state lighting is the development of high efficiency, phosphor-free white light emitting diodes (LEDs). In this context, we have investigated the molecular beam epitaxial growth and characterization of nanowire LEDs on Si, wherein intrinsic white-light emission is achieved by incorporating selforganized InGaN quantum dots in defect-free GaN nanowires on a single chip. We have further demonstrated that, with the incorporation of p-type modulation doping and AlGaN electron blocking layer, InGaN/GaN dot-in-a-wire white LEDs can exhibit nearly zero efficiency droop and significantly enhanced internal quantum efficiency (up to ∼57%) at room-temperature.",

keywords = "And gallium nitride, Light emitting diodes, Molecular beam epitaxy, Nanowire",

author = "Zetian Mi and Nguyen, {Hieu Pham Trung} and Shaofei Zhang and Kai Cui and Mehrdad Djavid",

year = "2013",

doi = "10.1117/12.2004498",

language = "English (US)",

isbn = "9780819494030",

series = "Proceedings of SPIE - The International Society for Optical Engineering",

booktitle = "Quantum Dots and Nanostructures",

note = "Quantum Dots and Nanostructures: Synthesis, Characterization, and Modeling X ; Conference date: 04-02-2013 Through 06-02-2013",

}

Mi, Z, Nguyen, HPT, Zhang, S, Cui, K & Djavid, M 2013, Molecular beam epitaxial growth and characterization of InGaN/GaN dot-in-a-wire nanoscale heterostructures: Toward ultrahigh efficiency phosphor-free white light emitting diodes. in Quantum Dots and Nanostructures: Synthesis, Characterization, and Modeling X., 86340B, Proceedings of SPIE - The International Society for Optical Engineering, vol. 8634, Quantum Dots and Nanostructures: Synthesis, Characterization, and Modeling X, San Francisco, CA, United States, 2/4/13. https://doi.org/10.1117/12.2004498

Molecular beam epitaxial growth and characterization of InGaN/GaN dot-in-a-wire nanoscale heterostructures: Toward ultrahigh efficiency phosphor-free white light emitting diodes. / Mi, Zetian; Nguyen, Hieu Pham Trung; Zhang, Shaofei et al.
Quantum Dots and Nanostructures: Synthesis, Characterization, and Modeling X. 2013. 86340B (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 8634).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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T2 - Quantum Dots and Nanostructures: Synthesis, Characterization, and Modeling X

AU - Mi, Zetian

AU - Nguyen, Hieu Pham Trung

AU - Zhang, Shaofei

AU - Cui, Kai

AU - Djavid, Mehrdad

PY - 2013

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N2 - One of the grand challenges for future solid state lighting is the development of high efficiency, phosphor-free white light emitting diodes (LEDs). In this context, we have investigated the molecular beam epitaxial growth and characterization of nanowire LEDs on Si, wherein intrinsic white-light emission is achieved by incorporating selforganized InGaN quantum dots in defect-free GaN nanowires on a single chip. We have further demonstrated that, with the incorporation of p-type modulation doping and AlGaN electron blocking layer, InGaN/GaN dot-in-a-wire white LEDs can exhibit nearly zero efficiency droop and significantly enhanced internal quantum efficiency (up to ∼57%) at room-temperature.

AB - One of the grand challenges for future solid state lighting is the development of high efficiency, phosphor-free white light emitting diodes (LEDs). In this context, we have investigated the molecular beam epitaxial growth and characterization of nanowire LEDs on Si, wherein intrinsic white-light emission is achieved by incorporating selforganized InGaN quantum dots in defect-free GaN nanowires on a single chip. We have further demonstrated that, with the incorporation of p-type modulation doping and AlGaN electron blocking layer, InGaN/GaN dot-in-a-wire white LEDs can exhibit nearly zero efficiency droop and significantly enhanced internal quantum efficiency (up to ∼57%) at room-temperature.

KW - And gallium nitride

KW - Light emitting diodes

KW - Molecular beam epitaxy

KW - Nanowire

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Mi Z, Nguyen HPT, Zhang S, Cui K, Djavid M. Molecular beam epitaxial growth and characterization of InGaN/GaN dot-in-a-wire nanoscale heterostructures: Toward ultrahigh efficiency phosphor-free white light emitting diodes. In Quantum Dots and Nanostructures: Synthesis, Characterization, and Modeling X. 2013. 86340B. (Proceedings of SPIE - The International Society for Optical Engineering). doi: 10.1117/12.2004498

Molecular beam epitaxial growth and characterization of InGaN/GaN dot-in-a-wire nanoscale heterostructures: Toward ultrahigh efficiency phosphor-free white light emitting diodes

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Keywords

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