Abstract
We report on the molecular beam epitaxial growth, fabrication, and characterization of InGaN/GaN dot-in-a-wire white light emitting diodes (LEDs) grown on Si(111). By varying the In compositions in the dot layers, we have demonstrated strong white light emission. The dot-in-a-wire LEDs exhibit a relatively high internal quantum efficiency of ∼ 36.7% and virtually zero efficiency droop for current densities up to ∼ 200 A/cm2 at room temperature, which are attributed to the superior 3-dimensional carrier confinement provided by the dots and to the use of nearly defect and strain-free GaN nanowires.
Original language | English (US) |
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Title of host publication | Wide Bandgap Semiconductor Materials and Devices 12 |
Pages | 41-46 |
Number of pages | 6 |
Volume | 35 |
Edition | 6 |
DOIs | |
State | Published - Aug 1 2011 |
Externally published | Yes |
Event | Wide Bandgap Semiconductor Materials and Devices 12 - 219th ECS Meeting - Montreal, QC, Canada Duration: May 1 2011 → May 6 2011 |
Other
Other | Wide Bandgap Semiconductor Materials and Devices 12 - 219th ECS Meeting |
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Country/Territory | Canada |
City | Montreal, QC |
Period | 5/1/11 → 5/6/11 |
All Science Journal Classification (ASJC) codes
- Engineering(all)