Molecular beam epitaxial growth, fabrication, and characterization of high efficiency InGaN/GaN Dot-in-a-wire white light emitting diodes on Si(111)

H. P.T. Nguyen; S. Zhang; K. Cui; X. Han; Z. Mi

doi:10.1149/1.3570844

Molecular beam epitaxial growth, fabrication, and characterization of high efficiency InGaN/GaN Dot-in-a-wire white light emitting diodes on Si(111)

H. P.T. Nguyen, S. Zhang, K. Cui, X. Han, Z. Mi

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Scopus citations

Abstract

We report on the molecular beam epitaxial growth, fabrication, and characterization of InGaN/GaN dot-in-a-wire white light emitting diodes (LEDs) grown on Si(111). By varying the In compositions in the dot layers, we have demonstrated strong white light emission. The dot-in-a-wire LEDs exhibit a relatively high internal quantum efficiency of ∼ 36.7% and virtually zero efficiency droop for current densities up to ∼ 200 A/cm² at room temperature, which are attributed to the superior 3-dimensional carrier confinement provided by the dots and to the use of nearly defect and strain-free GaN nanowires.

Original language	English (US)
Title of host publication	Wide Bandgap Semiconductor Materials and Devices 12
Publisher	Electrochemical Society Inc.
Pages	41-46
Number of pages	6
Edition	6
ISBN (Electronic)	9781607682172
ISBN (Print)	9781566778671
DOIs	https://doi.org/10.1149/1.3570844
State	Published - 2011
Externally published	Yes

Publication series

Name	ECS Transactions
Number	6
Volume	35
ISSN (Print)	1938-5862
ISSN (Electronic)	1938-6737

All Science Journal Classification (ASJC) codes

General Engineering

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10.1149/1.3570844

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Nguyen, H. P. T., Zhang, S., Cui, K., Han, X., & Mi, Z. (2011). Molecular beam epitaxial growth, fabrication, and characterization of high efficiency InGaN/GaN Dot-in-a-wire white light emitting diodes on Si(111). In Wide Bandgap Semiconductor Materials and Devices 12 (6 ed., pp. 41-46). (ECS Transactions; Vol. 35, No. 6). Electrochemical Society Inc.. https://doi.org/10.1149/1.3570844

@inproceedings{520b0689b6204eee9ceec2d771fc0734,

title = "Molecular beam epitaxial growth, fabrication, and characterization of high efficiency InGaN/GaN Dot-in-a-wire white light emitting diodes on Si(111)",

abstract = "We report on the molecular beam epitaxial growth, fabrication, and characterization of InGaN/GaN dot-in-a-wire white light emitting diodes (LEDs) grown on Si(111). By varying the In compositions in the dot layers, we have demonstrated strong white light emission. The dot-in-a-wire LEDs exhibit a relatively high internal quantum efficiency of ∼ 36.7% and virtually zero efficiency droop for current densities up to ∼ 200 A/cm2 at room temperature, which are attributed to the superior 3-dimensional carrier confinement provided by the dots and to the use of nearly defect and strain-free GaN nanowires.",

author = "Nguyen, {H. P.T.} and S. Zhang and K. Cui and X. Han and Z. Mi",

year = "2011",

doi = "10.1149/1.3570844",

language = "English (US)",

isbn = "9781566778671",

series = "ECS Transactions",

publisher = "Electrochemical Society Inc.",

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}

Nguyen, HPT, Zhang, S, Cui, K, Han, X & Mi, Z 2011, Molecular beam epitaxial growth, fabrication, and characterization of high efficiency InGaN/GaN Dot-in-a-wire white light emitting diodes on Si(111). in Wide Bandgap Semiconductor Materials and Devices 12. 6 edn, ECS Transactions, no. 6, vol. 35, Electrochemical Society Inc., pp. 41-46. https://doi.org/10.1149/1.3570844

Molecular beam epitaxial growth, fabrication, and characterization of high efficiency InGaN/GaN Dot-in-a-wire white light emitting diodes on Si(111). / Nguyen, H. P.T.; Zhang, S.; Cui, K. et al.
Wide Bandgap Semiconductor Materials and Devices 12. 6. ed. Electrochemical Society Inc., 2011. p. 41-46 (ECS Transactions; Vol. 35, No. 6).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - Molecular beam epitaxial growth, fabrication, and characterization of high efficiency InGaN/GaN Dot-in-a-wire white light emitting diodes on Si(111)

AU - Nguyen, H. P.T.

AU - Zhang, S.

AU - Cui, K.

AU - Han, X.

AU - Mi, Z.

PY - 2011

Y1 - 2011

N2 - We report on the molecular beam epitaxial growth, fabrication, and characterization of InGaN/GaN dot-in-a-wire white light emitting diodes (LEDs) grown on Si(111). By varying the In compositions in the dot layers, we have demonstrated strong white light emission. The dot-in-a-wire LEDs exhibit a relatively high internal quantum efficiency of ∼ 36.7% and virtually zero efficiency droop for current densities up to ∼ 200 A/cm2 at room temperature, which are attributed to the superior 3-dimensional carrier confinement provided by the dots and to the use of nearly defect and strain-free GaN nanowires.

AB - We report on the molecular beam epitaxial growth, fabrication, and characterization of InGaN/GaN dot-in-a-wire white light emitting diodes (LEDs) grown on Si(111). By varying the In compositions in the dot layers, we have demonstrated strong white light emission. The dot-in-a-wire LEDs exhibit a relatively high internal quantum efficiency of ∼ 36.7% and virtually zero efficiency droop for current densities up to ∼ 200 A/cm2 at room temperature, which are attributed to the superior 3-dimensional carrier confinement provided by the dots and to the use of nearly defect and strain-free GaN nanowires.

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DO - 10.1149/1.3570844

M3 - Conference contribution

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SN - 9781566778671

T3 - ECS Transactions

SP - 41

EP - 46

BT - Wide Bandgap Semiconductor Materials and Devices 12

PB - Electrochemical Society Inc.

ER -

Molecular beam epitaxial growth, fabrication, and characterization of high efficiency InGaN/GaN Dot-in-a-wire white light emitting diodes on Si(111)

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