Molecular beam epitaxial growth, fabrication, and characterization of high efficiency InGaN/GaN Dot-in-a-wire white light emitting diodes on Si(111)

Hieu Nguyen; S. Zhang; K. Cui; X. Han; Z. Mi

doi:10.1149/1.3570844

Molecular beam epitaxial growth, fabrication, and characterization of high efficiency InGaN/GaN Dot-in-a-wire white light emitting diodes on Si(111)

Hieu Nguyen, S. Zhang, K. Cui, X. Han, Z. Mi

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Scopus citations

Abstract

We report on the molecular beam epitaxial growth, fabrication, and characterization of InGaN/GaN dot-in-a-wire white light emitting diodes (LEDs) grown on Si(111). By varying the In compositions in the dot layers, we have demonstrated strong white light emission. The dot-in-a-wire LEDs exhibit a relatively high internal quantum efficiency of ∼ 36.7% and virtually zero efficiency droop for current densities up to ∼ 200 A/cm² at room temperature, which are attributed to the superior 3-dimensional carrier confinement provided by the dots and to the use of nearly defect and strain-free GaN nanowires.

Original language	English (US)
Title of host publication	Wide Bandgap Semiconductor Materials and Devices 12
Pages	41-46
Number of pages	6
Volume	35
Edition	6
DOIs	https://doi.org/10.1149/1.3570844
State	Published - Aug 1 2011
Externally published	Yes
Event	Wide Bandgap Semiconductor Materials and Devices 12 - 219th ECS Meeting - Montreal, QC, Canada Duration: May 1 2011 → May 6 2011

Other

Other	Wide Bandgap Semiconductor Materials and Devices 12 - 219th ECS Meeting
Country/Territory	Canada
City	Montreal, QC
Period	5/1/11 → 5/6/11

All Science Journal Classification (ASJC) codes

Engineering(all)

Access to Document

10.1149/1.3570844

Cite this

@inproceedings{520b0689b6204eee9ceec2d771fc0734,

title = "Molecular beam epitaxial growth, fabrication, and characterization of high efficiency InGaN/GaN Dot-in-a-wire white light emitting diodes on Si(111)",

abstract = "We report on the molecular beam epitaxial growth, fabrication, and characterization of InGaN/GaN dot-in-a-wire white light emitting diodes (LEDs) grown on Si(111). By varying the In compositions in the dot layers, we have demonstrated strong white light emission. The dot-in-a-wire LEDs exhibit a relatively high internal quantum efficiency of ∼ 36.7% and virtually zero efficiency droop for current densities up to ∼ 200 A/cm2 at room temperature, which are attributed to the superior 3-dimensional carrier confinement provided by the dots and to the use of nearly defect and strain-free GaN nanowires.",

author = "Hieu Nguyen and S. Zhang and K. Cui and X. Han and Z. Mi",

year = "2011",

month = aug,

day = "1",

doi = "10.1149/1.3570844",

language = "English (US)",

isbn = "9781566778671",

volume = "35",

pages = "41--46",

booktitle = "Wide Bandgap Semiconductor Materials and Devices 12",

edition = "6",

note = "Wide Bandgap Semiconductor Materials and Devices 12 - 219th ECS Meeting ; Conference date: 01-05-2011 Through 06-05-2011",

}

Nguyen, H, Zhang, S, Cui, K, Han, X & Mi, Z 2011, Molecular beam epitaxial growth, fabrication, and characterization of high efficiency InGaN/GaN Dot-in-a-wire white light emitting diodes on Si(111). in Wide Bandgap Semiconductor Materials and Devices 12. 6 edn, vol. 35, pp. 41-46, Wide Bandgap Semiconductor Materials and Devices 12 - 219th ECS Meeting, Montreal, QC, Canada, 5/1/11. https://doi.org/10.1149/1.3570844

TY - GEN

T1 - Molecular beam epitaxial growth, fabrication, and characterization of high efficiency InGaN/GaN Dot-in-a-wire white light emitting diodes on Si(111)

AU - Nguyen, Hieu

AU - Zhang, S.

AU - Cui, K.

AU - Han, X.

AU - Mi, Z.

PY - 2011/8/1

Y1 - 2011/8/1

N2 - We report on the molecular beam epitaxial growth, fabrication, and characterization of InGaN/GaN dot-in-a-wire white light emitting diodes (LEDs) grown on Si(111). By varying the In compositions in the dot layers, we have demonstrated strong white light emission. The dot-in-a-wire LEDs exhibit a relatively high internal quantum efficiency of ∼ 36.7% and virtually zero efficiency droop for current densities up to ∼ 200 A/cm2 at room temperature, which are attributed to the superior 3-dimensional carrier confinement provided by the dots and to the use of nearly defect and strain-free GaN nanowires.

AB - We report on the molecular beam epitaxial growth, fabrication, and characterization of InGaN/GaN dot-in-a-wire white light emitting diodes (LEDs) grown on Si(111). By varying the In compositions in the dot layers, we have demonstrated strong white light emission. The dot-in-a-wire LEDs exhibit a relatively high internal quantum efficiency of ∼ 36.7% and virtually zero efficiency droop for current densities up to ∼ 200 A/cm2 at room temperature, which are attributed to the superior 3-dimensional carrier confinement provided by the dots and to the use of nearly defect and strain-free GaN nanowires.

UR - http://www.scopus.com/inward/record.url?scp=79960763931&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=79960763931&partnerID=8YFLogxK

U2 - 10.1149/1.3570844

DO - 10.1149/1.3570844

M3 - Conference contribution

AN - SCOPUS:79960763931

SN - 9781566778671

VL - 35

SP - 41

EP - 46

BT - Wide Bandgap Semiconductor Materials and Devices 12

T2 - Wide Bandgap Semiconductor Materials and Devices 12 - 219th ECS Meeting

Y2 - 1 May 2011 through 6 May 2011

ER -

Molecular beam epitaxial growth, fabrication, and characterization of high efficiency InGaN/GaN Dot-in-a-wire white light emitting diodes on Si(111)

Abstract

Other

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this