Molecular beam epitaxial growth, fabrication, and characterization of high efficiency InGaN/GaN Dot-in-a-wire white light emitting diodes on Si(111)

Hieu Nguyen, S. Zhang, K. Cui, X. Han, Z. Mi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Abstract

We report on the molecular beam epitaxial growth, fabrication, and characterization of InGaN/GaN dot-in-a-wire white light emitting diodes (LEDs) grown on Si(111). By varying the In compositions in the dot layers, we have demonstrated strong white light emission. The dot-in-a-wire LEDs exhibit a relatively high internal quantum efficiency of ∼ 36.7% and virtually zero efficiency droop for current densities up to ∼ 200 A/cm2 at room temperature, which are attributed to the superior 3-dimensional carrier confinement provided by the dots and to the use of nearly defect and strain-free GaN nanowires.

Original languageEnglish (US)
Title of host publicationWide Bandgap Semiconductor Materials and Devices 12
Pages41-46
Number of pages6
Volume35
Edition6
DOIs
StatePublished - Aug 1 2011
Externally publishedYes
EventWide Bandgap Semiconductor Materials and Devices 12 - 219th ECS Meeting - Montreal, QC, Canada
Duration: May 1 2011May 6 2011

Other

OtherWide Bandgap Semiconductor Materials and Devices 12 - 219th ECS Meeting
Country/TerritoryCanada
CityMontreal, QC
Period5/1/115/6/11

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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