Abstract
This paper investigates the electrical characteristics at low temperatures through C-V, I-V and conductance measurements to understand the interface behavior of HfO 2 and p-type GaAs bulk substrate. Room temperature interface state density, D it, estimated for as-deposited Ti-Au/HfO 2/GaAs capacitors was found to be 3.68 × 10 11 cm -2 eV -1. Low temperature measurement suggests that only fast interface states contribute to the conduction process. When the characteristics of two different metal gates were compared, the accumulation capacitance density observed to be 1.4 and 8.98 fF/μm 2 for Be-Au/HfO 2/GaAs and Ti-Au/HfO 2/GaAs, respectively at 1 MHz.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 1322-1326 |
| Number of pages | 5 |
| Journal | Journal of Materials Science: Materials in Electronics |
| Volume | 21 |
| Issue number | 12 |
| DOIs | |
| State | Published - Dec 2010 |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Condensed Matter Physics
- Electrical and Electronic Engineering