MOS capacitors with metal gate/high-k dielectrics on GaAs bulk substrate

V. Budhraja, X. Wang, D. Misra

Research output: Contribution to journalArticlepeer-review

15 Scopus citations

Abstract

This paper investigates the electrical characteristics at low temperatures through C-V, I-V and conductance measurements to understand the interface behavior of HfO 2 and p-type GaAs bulk substrate. Room temperature interface state density, D it, estimated for as-deposited Ti-Au/HfO 2/GaAs capacitors was found to be 3.68 × 10 11 cm -2 eV -1. Low temperature measurement suggests that only fast interface states contribute to the conduction process. When the characteristics of two different metal gates were compared, the accumulation capacitance density observed to be 1.4 and 8.98 fF/μm 2 for Be-Au/HfO 2/GaAs and Ti-Au/HfO 2/GaAs, respectively at 1 MHz.

Original languageEnglish (US)
Pages (from-to)1322-1326
Number of pages5
JournalJournal of Materials Science: Materials in Electronics
Volume21
Issue number12
DOIs
StatePublished - Dec 2010

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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