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MOS capacitors with metal gate/high-k dielectrics on GaAs bulk substrate
V. Budhraja, X. Wang,
D. Misra
Electrical and Computer Engineering
Research output
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Contribution to journal
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Article
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peer-review
16
Scopus citations
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Keyphrases
High-k Dielectric
100%
Gallium Arsenide
100%
Metal Gate
100%
MOS Capacitor
100%
Bulk Substrate
100%
HfO2
80%
Low Temperature
20%
Room Temperature
20%
Interface Behavior
20%
P-type
20%
Electrical Characteristics
20%
Interface State Density
20%
Low Temperature Measurements
20%
Capacitors
20%
Interface States
20%
Conduction Process
20%
I-V Measurement
20%
Conductance Measurement
20%
As-deposited
20%
Capacitance Density
20%
Accumulation Capacitance
20%
Engineering
Dielectrics
100%
Gallium Arsenide
100%
Metal Gate
100%
Low-Temperature
40%
Interface State
40%
Room Temperature
20%
Material Science
Dielectric Material
100%
Capacitor
100%
Gallium Arsenide
100%
Density
40%
Capacitance
20%
Electrical Property
20%