Multilayered ALD HfAlO_x and HfO₂ for high-quality gate stacks

This paper has demonstrated a high-quality HfO₂- based gate stack by depositing atomic-layer-deposited HfAlO_x along with HfO₂ in a layered structure. In order to get a multifold enhancement of the gate stack quality, both Al percentage and distribution were observed by varying theHfAlO_x layer thickness and its location in the gate stack. It was found that < 2% Al/(Al + Hf)% incorporation can result in up to 18% reduction in the average EOT along with up to 41% reduction in the gate leakage current, as compared to the dielectric with no Al content. On the other hand, excess Al presence in the interfacial layer moderately increased the interface state density D_it. When devices were stressed in the gate injection mode at a constant voltage stress, the dielectrics with Al/(Hf+Al)%<2% showed resistance to stressinduced flatband voltage shiftΔV_FB, and stress-induced leakage current. The time-dependent dielectric breakdown characteristics showed a higher charge to breakdown and an increase in the extracted Weibull slope β, which further confirms an enhanced dielectric reliability for devices with < 2% Al/(Al + Hf)%.