Multilevel resistive switching in Hf-based RRAM

B. Jain, C. S. Huang, D. Misra, K. Tapily, R. D. Clark, S. Consiglio, C. S. Wajda, G. J. Leusink

Research output: Chapter in Book/Report/Conference proceedingConference contribution

7 Scopus citations

Abstract

In this paper, the multilevel switching behaviors of resistive random-access memory (RRAM) devices with three different dielectric materials such as HfO2, HfZrO2 and HfAlO2 are investigated. We have further explored the switching characteristics with two different top electrode materials and with different processing environments. In all devices we have introduced a thin buffer layer to reduce switching power and improve the uniformity. Variation in the resistive behavior (Roff/Ron values) of different RRAM structures were observed and was correlated with possible oxygen vacancy related defects present in the dielectric.

Original languageEnglish (US)
Title of host publicationSilicon Compatible Emerging Materials, Processes, and Technologies for Advanced CMOS and Post-CMOS Applications 9
EditorsF. Roozeboom, P. J. Timans, K. Kakushima, E. P. Gusev, Z. Karim, D. Misra, Y. S. Obeng, S. De Gendt, H. Jagannathan
PublisherElectrochemical Society Inc.
Pages39-44
Number of pages6
Edition3
ISBN (Electronic)9781607688662, 9781607688686, 9781607688693, 9781607688709, 9781607688716, 9781607688723
DOIs
StatePublished - 2019
EventInternational Symposium on Silicon Compatible Emerging Materials, Processes, and Technologies for Advanced CMOS and Post-CMOS Applications 9 - 235th ECS Meeting - Dallas, United States
Duration: May 26 2019May 30 2019

Publication series

NameECS Transactions
Number3
Volume89
ISSN (Print)1938-6737
ISSN (Electronic)1938-5862

Conference

ConferenceInternational Symposium on Silicon Compatible Emerging Materials, Processes, and Technologies for Advanced CMOS and Post-CMOS Applications 9 - 235th ECS Meeting
CountryUnited States
CityDallas
Period5/26/195/30/19

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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