@inproceedings{5a45e0ca9de54566901251695d4c4d00,
title = "Multilevel resistive switching in Hf-based RRAM",
abstract = "In this paper, the multilevel switching behaviors of resistive random-access memory (RRAM) devices with three different dielectric materials such as HfO2, HfZrO2 and HfAlO2 are investigated. We have further explored the switching characteristics with two different top electrode materials and with different processing environments. In all devices we have introduced a thin buffer layer to reduce switching power and improve the uniformity. Variation in the resistive behavior (Roff/Ron values) of different RRAM structures were observed and was correlated with possible oxygen vacancy related defects present in the dielectric.",
author = "B. Jain and Huang, {C. S.} and D. Misra and K. Tapily and Clark, {R. D.} and S. Consiglio and Wajda, {C. S.} and Leusink, {G. J.}",
note = "Publisher Copyright: {\textcopyright} 2019 Electrochemical Society Inc.. All rights reserved.; International Symposium on Silicon Compatible Emerging Materials, Processes, and Technologies for Advanced CMOS and Post-CMOS Applications 9 - 235th ECS Meeting ; Conference date: 26-05-2019 Through 30-05-2019",
year = "2019",
doi = "10.1149/08903.0039ecst",
language = "English (US)",
series = "ECS Transactions",
publisher = "Electrochemical Society Inc.",
number = "3",
pages = "39--44",
editor = "F. Roozeboom and Timans, {P. J.} and K. Kakushima and Gusev, {E. P.} and Z. Karim and D. Misra and Obeng, {Y. S.} and {De Gendt}, S. and H. Jagannathan",
booktitle = "Silicon Compatible Emerging Materials, Processes, and Technologies for Advanced CMOS and Post-CMOS Applications 9",
edition = "3",
}