Multilevel resistive switching in Hf-based RRAM

Keyphrases

• Buffer Layer 33%
• Dielectric 33%
• Dielectric Materials 33%
• Electrode Materials 33%
• HfO2 33%
• HfZrO2 33%
• Memory Device 33%
• Memory Structure 33%
• Multilevel Resistive Switching 100%
• Multilevel Switching 33%
• Oxygen Vacancy 33%
• Processing Environment 33%
• Resistive Behavior 33%
• Resistive Random Access Memory (ReRAM) 100%
• Switching Behavior 33%
• Switching Characteristics 33%
• Switching Energy 33%
• Thin Buffer 33%
• Top Electrode 33%
• Vacancy Defects 33%

Engineering

• Buffer Layer 33%
• Dielectrics 66%
• Oxygen Vacancy 33%
• Random Access Memory Device 33%
• Related Defect 33%
• Resistive 100%
• Resistive Random Access Memory 100%

Material Science

• Buffer Layer 33%
• Dielectric Material 66%
• Oxygen Vacancy 33%
• Resistive Random-Access Memory 100%