Nanocrystalline silicon superlattices: Building blocks for quantum devices

L. Tsybeskov, G. F. Grom, M. Jungo, L. Montes, P. M. Fauchet, J. P. McCaffrey, J. M. Baribeau, G. I. Sproule, D. J. Lockwood

Research output: Contribution to journalConference articlepeer-review

24 Scopus citations

Abstract

A nanocrystalline silicon superlattice (nc-Si SLs) is a structure consisting of Si nanocrystal layers separated by nanometer-thick SiO2. A long range order in the nc-Si SL is obtained along the direction of growth by periodically alternating layers of Si nanocrystals and SiO2. A number of characterization techniques such as transmission electron microscopy (TEM) and atomic force microscopy (AFM), Auger elemental microanalysis. X-ray diffraction and X-ray small angle reflection have proved that the nc-Si SL exhibits a very narrow nanocrystal size distribution (less than 5% in average) and very abrupt and flat nc-Si SiO2 interfaces with a roughness of <4 angstroms. Conductance tunnel spectroscopy and capacitance-voltage (C-V) measurements showed that the nc-Si SL is a nearly defect free structure. The results hold promise for nc-Si SL quantum device applications.

Original languageEnglish (US)
Pages (from-to)303-308
Number of pages6
JournalMaterials Science and Engineering B: Solid-State Materials for Advanced Technology
Volume69
DOIs
StatePublished - Jan 14 2000
Externally publishedYes
EventThe European Materials Research Society 1999 Spring Meeting, Symposium I: Microcrystalline and Nanocrystalline Semiconductors - Strasbourg, France
Duration: Jun 1 1999Jun 4 1999

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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