Nanocrystalline silicon superlattices: Building blocks for quantum devices

L. Tsybeskov; G. F. Grom; M. Jungo; L. Montes; P. M. Fauchet; J. P. McCaffrey; J. M. Baribeau; G. I. Sproule; D. J. Lockwood

doi:10.1016/S0921-5107(99)00292-5

Nanocrystalline silicon superlattices: Building blocks for quantum devices

L. Tsybeskov, G. F. Grom, M. Jungo, L. Montes, P. M. Fauchet, J. P. McCaffrey, J. M. Baribeau, G. I. Sproule, D. J. Lockwood

Research output: Contribution to journal › Conference article › peer-review

24 Scopus citations

Abstract

A nanocrystalline silicon superlattice (nc-Si SLs) is a structure consisting of Si nanocrystal layers separated by nanometer-thick SiO₂. A long range order in the nc-Si SL is obtained along the direction of growth by periodically alternating layers of Si nanocrystals and SiO₂. A number of characterization techniques such as transmission electron microscopy (TEM) and atomic force microscopy (AFM), Auger elemental microanalysis. X-ray diffraction and X-ray small angle reflection have proved that the nc-Si SL exhibits a very narrow nanocrystal size distribution (less than 5% in average) and very abrupt and flat nc-Si SiO₂ interfaces with a roughness of <4 angstroms. Conductance tunnel spectroscopy and capacitance-voltage (C-V) measurements showed that the nc-Si SL is a nearly defect free structure. The results hold promise for nc-Si SL quantum device applications.

Original language	English (US)
Pages (from-to)	303-308
Number of pages	6
Journal	Materials Science and Engineering B: Solid-State Materials for Advanced Technology
Volume	69
DOIs	https://doi.org/10.1016/S0921-5107(99)00292-5
State	Published - Jan 14 2000
Externally published	Yes
Event	The European Materials Research Society 1999 Spring Meeting, Symposium I: Microcrystalline and Nanocrystalline Semiconductors - Strasbourg, France Duration: Jun 1 1999 → Jun 4 1999

All Science Journal Classification (ASJC) codes

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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title = "Nanocrystalline silicon superlattices: Building blocks for quantum devices",

abstract = "A nanocrystalline silicon superlattice (nc-Si SLs) is a structure consisting of Si nanocrystal layers separated by nanometer-thick SiO2. A long range order in the nc-Si SL is obtained along the direction of growth by periodically alternating layers of Si nanocrystals and SiO2. A number of characterization techniques such as transmission electron microscopy (TEM) and atomic force microscopy (AFM), Auger elemental microanalysis. X-ray diffraction and X-ray small angle reflection have proved that the nc-Si SL exhibits a very narrow nanocrystal size distribution (less than 5% in average) and very abrupt and flat nc-Si SiO2 interfaces with a roughness of <4 angstroms. Conductance tunnel spectroscopy and capacitance-voltage (C-V) measurements showed that the nc-Si SL is a nearly defect free structure. The results hold promise for nc-Si SL quantum device applications.",

author = "L. Tsybeskov and Grom, {G. F.} and M. Jungo and L. Montes and Fauchet, {P. M.} and McCaffrey, {J. P.} and Baribeau, {J. M.} and Sproule, {G. I.} and Lockwood, {D. J.}",

year = "2000",

month = jan,

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doi = "10.1016/S0921-5107(99)00292-5",

language = "English (US)",

volume = "69",

pages = "303--308",

journal = "Materials Science and Engineering B: Solid-State Materials for Advanced Technology",

issn = "0921-5107",

publisher = "Elsevier Ltd",

note = "The European Materials Research Society 1999 Spring Meeting, Symposium I: Microcrystalline and Nanocrystalline Semiconductors ; Conference date: 01-06-1999 Through 04-06-1999",

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TY - JOUR

T1 - Nanocrystalline silicon superlattices

T2 - The European Materials Research Society 1999 Spring Meeting, Symposium I: Microcrystalline and Nanocrystalline Semiconductors

AU - Tsybeskov, L.

AU - Grom, G. F.

AU - Jungo, M.

AU - Montes, L.

AU - Fauchet, P. M.

AU - McCaffrey, J. P.

AU - Baribeau, J. M.

AU - Sproule, G. I.

AU - Lockwood, D. J.

PY - 2000/1/14

Y1 - 2000/1/14

N2 - A nanocrystalline silicon superlattice (nc-Si SLs) is a structure consisting of Si nanocrystal layers separated by nanometer-thick SiO2. A long range order in the nc-Si SL is obtained along the direction of growth by periodically alternating layers of Si nanocrystals and SiO2. A number of characterization techniques such as transmission electron microscopy (TEM) and atomic force microscopy (AFM), Auger elemental microanalysis. X-ray diffraction and X-ray small angle reflection have proved that the nc-Si SL exhibits a very narrow nanocrystal size distribution (less than 5% in average) and very abrupt and flat nc-Si SiO2 interfaces with a roughness of <4 angstroms. Conductance tunnel spectroscopy and capacitance-voltage (C-V) measurements showed that the nc-Si SL is a nearly defect free structure. The results hold promise for nc-Si SL quantum device applications.

AB - A nanocrystalline silicon superlattice (nc-Si SLs) is a structure consisting of Si nanocrystal layers separated by nanometer-thick SiO2. A long range order in the nc-Si SL is obtained along the direction of growth by periodically alternating layers of Si nanocrystals and SiO2. A number of characterization techniques such as transmission electron microscopy (TEM) and atomic force microscopy (AFM), Auger elemental microanalysis. X-ray diffraction and X-ray small angle reflection have proved that the nc-Si SL exhibits a very narrow nanocrystal size distribution (less than 5% in average) and very abrupt and flat nc-Si SiO2 interfaces with a roughness of <4 angstroms. Conductance tunnel spectroscopy and capacitance-voltage (C-V) measurements showed that the nc-Si SL is a nearly defect free structure. The results hold promise for nc-Si SL quantum device applications.

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UR - http://www.scopus.com/inward/citedby.url?scp=0033881935&partnerID=8YFLogxK

U2 - 10.1016/S0921-5107(99)00292-5

DO - 10.1016/S0921-5107(99)00292-5

M3 - Conference article

AN - SCOPUS:0033881935

SN - 0921-5107

VL - 69

SP - 303

EP - 308

JO - Materials Science and Engineering B: Solid-State Materials for Advanced Technology

JF - Materials Science and Engineering B: Solid-State Materials for Advanced Technology

Y2 - 1 June 1999 through 4 June 1999

ER -

Nanocrystalline silicon superlattices: Building blocks for quantum devices

Abstract

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