Nanocrystalline silicon superlattices: Building blocks for quantum devices

L. Tsybeskov; G. F. Grom; M. Jungo; L. Montes; P. M. Fauchet; J. P. McCaffrey; J. M. Baribeau; G. I. Sproule; D. J. Lockwood

doi:10.1016/S0921-5107(99)00292-5

Nanocrystalline silicon superlattices: Building blocks for quantum devices

L. Tsybeskov
, G. F. Grom
, M. Jungo
, L. Montes
, P. M. Fauchet
, J. P. McCaffrey
, J. M. Baribeau
, G. I. Sproule
, D. J. Lockwood

Research output: Contribution to journal › Conference article › peer-review

25 Scopus citations

Abstract

A nanocrystalline silicon superlattice (nc-Si SLs) is a structure consisting of Si nanocrystal layers separated by nanometer-thick SiO₂. A long range order in the nc-Si SL is obtained along the direction of growth by periodically alternating layers of Si nanocrystals and SiO₂. A number of characterization techniques such as transmission electron microscopy (TEM) and atomic force microscopy (AFM), Auger elemental microanalysis. X-ray diffraction and X-ray small angle reflection have proved that the nc-Si SL exhibits a very narrow nanocrystal size distribution (less than 5% in average) and very abrupt and flat nc-Si SiO₂ interfaces with a roughness of <4 angstroms. Conductance tunnel spectroscopy and capacitance-voltage (C-V) measurements showed that the nc-Si SL is a nearly defect free structure. The results hold promise for nc-Si SL quantum device applications.

Original language	English (US)
Pages (from-to)	303-308
Number of pages	6
Journal	Materials Science and Engineering B: Solid-State Materials for Advanced Technology
Volume	69
DOIs	https://doi.org/10.1016/S0921-5107(99)00292-5
State	Published - Jan 14 2000
Externally published	Yes
Event	The European Materials Research Society 1999 Spring Meeting, Symposium I: Microcrystalline and Nanocrystalline Semiconductors - Strasbourg, France Duration: Jun 1 1999 → Jun 4 1999

All Science Journal Classification (ASJC) codes

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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10.1016/S0921-5107(99)00292-5

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@article{18925fc2172f4760b4528ac1dedd0260,

title = "Nanocrystalline silicon superlattices: Building blocks for quantum devices",

abstract = "A nanocrystalline silicon superlattice (nc-Si SLs) is a structure consisting of Si nanocrystal layers separated by nanometer-thick SiO2. A long range order in the nc-Si SL is obtained along the direction of growth by periodically alternating layers of Si nanocrystals and SiO2. A number of characterization techniques such as transmission electron microscopy (TEM) and atomic force microscopy (AFM), Auger elemental microanalysis. X-ray diffraction and X-ray small angle reflection have proved that the nc-Si SL exhibits a very narrow nanocrystal size distribution (less than 5\% in average) and very abrupt and flat nc-Si SiO2 interfaces with a roughness of <4 angstroms. Conductance tunnel spectroscopy and capacitance-voltage (C-V) measurements showed that the nc-Si SL is a nearly defect free structure. The results hold promise for nc-Si SL quantum device applications.",

author = "L. Tsybeskov and Grom, \{G. F.\} and M. Jungo and L. Montes and Fauchet, \{P. M.\} and McCaffrey, \{J. P.\} and Baribeau, \{J. M.\} and Sproule, \{G. I.\} and Lockwood, \{D. J.\}",

year = "2000",

month = jan,

day = "14",

doi = "10.1016/S0921-5107(99)00292-5",

language = "English (US)",

volume = "69",

pages = "303--308",

journal = "Materials Science and Engineering B: Solid-State Materials for Advanced Technology",

issn = "0921-5107",

publisher = "Elsevier Ltd",

note = "The European Materials Research Society 1999 Spring Meeting, Symposium I: Microcrystalline and Nanocrystalline Semiconductors ; Conference date: 01-06-1999 Through 04-06-1999",

}

TY - JOUR

T1 - Nanocrystalline silicon superlattices

T2 - The European Materials Research Society 1999 Spring Meeting, Symposium I: Microcrystalline and Nanocrystalline Semiconductors

AU - Tsybeskov, L.

AU - Grom, G. F.

AU - Jungo, M.

AU - Montes, L.

AU - Fauchet, P. M.

AU - McCaffrey, J. P.

AU - Baribeau, J. M.

AU - Sproule, G. I.

AU - Lockwood, D. J.

PY - 2000/1/14

Y1 - 2000/1/14

N2 - A nanocrystalline silicon superlattice (nc-Si SLs) is a structure consisting of Si nanocrystal layers separated by nanometer-thick SiO2. A long range order in the nc-Si SL is obtained along the direction of growth by periodically alternating layers of Si nanocrystals and SiO2. A number of characterization techniques such as transmission electron microscopy (TEM) and atomic force microscopy (AFM), Auger elemental microanalysis. X-ray diffraction and X-ray small angle reflection have proved that the nc-Si SL exhibits a very narrow nanocrystal size distribution (less than 5% in average) and very abrupt and flat nc-Si SiO2 interfaces with a roughness of <4 angstroms. Conductance tunnel spectroscopy and capacitance-voltage (C-V) measurements showed that the nc-Si SL is a nearly defect free structure. The results hold promise for nc-Si SL quantum device applications.

AB - A nanocrystalline silicon superlattice (nc-Si SLs) is a structure consisting of Si nanocrystal layers separated by nanometer-thick SiO2. A long range order in the nc-Si SL is obtained along the direction of growth by periodically alternating layers of Si nanocrystals and SiO2. A number of characterization techniques such as transmission electron microscopy (TEM) and atomic force microscopy (AFM), Auger elemental microanalysis. X-ray diffraction and X-ray small angle reflection have proved that the nc-Si SL exhibits a very narrow nanocrystal size distribution (less than 5% in average) and very abrupt and flat nc-Si SiO2 interfaces with a roughness of <4 angstroms. Conductance tunnel spectroscopy and capacitance-voltage (C-V) measurements showed that the nc-Si SL is a nearly defect free structure. The results hold promise for nc-Si SL quantum device applications.

UR - https://www.scopus.com/pages/publications/0033881935

UR - https://www.scopus.com/pages/publications/0033881935#tab=citedBy

U2 - 10.1016/S0921-5107(99)00292-5

DO - 10.1016/S0921-5107(99)00292-5

M3 - Conference article

AN - SCOPUS:0033881935

SN - 0921-5107

VL - 69

SP - 303

EP - 308

JO - Materials Science and Engineering B: Solid-State Materials for Advanced Technology

JF - Materials Science and Engineering B: Solid-State Materials for Advanced Technology

Y2 - 1 June 1999 through 4 June 1999

ER -

Nanocrystalline silicon superlattices: Building blocks for quantum devices

Abstract

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