Nanocrystalline silicon superlattices: Fabrication and characterization

M. Zacharias; L. Tsybeskov; K. D. Hirschman; P. M. Fauchet; J. Bläsing; P. Kohlert; P. Veit

doi:10.1016/S0022-3093(98)00287-7

Nanocrystalline silicon superlattices: Fabrication and characterization

M. Zacharias, L. Tsybeskov, K. D. Hirschman, P. M. Fauchet, J. Bläsing, P. Kohlert, P. Veit

Research output: Contribution to journal › Article › peer-review

33 Scopus citations

Abstract

Rapid thermal annealing of amorphous Si/SiO₂ superlattices deposited by rf-sputtering and plasma oxidation forms Si nanocrystals while maintaining the superlattice structure. The crystal size is controlled by the thickness of the Si sublayers and can be varied from 12 nm to ∼ 2.5 nm. The strain in the c-Si/SiO₂ structure is released by annealing at 1050°C using a slow temperature ramp. After wet oxidation which reduces the size and completes the passivation of the crystals by SiO₂, the room-temperature band-edge photoluminescence reaches an external quantum efficiency >0.1%.

Original language	English (US)
Pages (from-to)	1132-1136
Number of pages	5
Journal	Journal of Non-Crystalline Solids
Volume	227-230
Issue number	PART 2
DOIs	https://doi.org/10.1016/S0022-3093(98)00287-7
State	Published - May 1998
Externally published	Yes

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Ceramics and Composites
Condensed Matter Physics
Materials Chemistry

Keywords

Plasma oxidation
Radio frequency sputtering
Si crystals

Access to Document

10.1016/S0022-3093(98)00287-7

Cite this

@article{b0eb078d64c24172adbea2b7c0815339,

title = "Nanocrystalline silicon superlattices: Fabrication and characterization",

abstract = "Rapid thermal annealing of amorphous Si/SiO2 superlattices deposited by rf-sputtering and plasma oxidation forms Si nanocrystals while maintaining the superlattice structure. The crystal size is controlled by the thickness of the Si sublayers and can be varied from 12 nm to ∼ 2.5 nm. The strain in the c-Si/SiO2 structure is released by annealing at 1050°C using a slow temperature ramp. After wet oxidation which reduces the size and completes the passivation of the crystals by SiO2, the room-temperature band-edge photoluminescence reaches an external quantum efficiency >0.1%.",

keywords = "Plasma oxidation, Radio frequency sputtering, Si crystals",

author = "M. Zacharias and L. Tsybeskov and Hirschman, {K. D.} and Fauchet, {P. M.} and J. Bl{\"a}sing and P. Kohlert and P. Veit",

note = "Funding Information: Financial support by the Deutsche Forschungsgemeinschaft, the Kultusministerium of Sachsen-Anhalt and the US Army Research Office is gratefully acknowledged. ",

year = "1998",

month = may,

doi = "10.1016/S0022-3093(98)00287-7",

language = "English (US)",

volume = "227-230",

pages = "1132--1136",

journal = "Journal of Non-Crystalline Solids",

issn = "0022-3093",

publisher = "Elsevier",

number = "PART 2",

}

TY - JOUR

T1 - Nanocrystalline silicon superlattices

T2 - Fabrication and characterization

AU - Zacharias, M.

AU - Tsybeskov, L.

AU - Hirschman, K. D.

AU - Fauchet, P. M.

AU - Bläsing, J.

AU - Kohlert, P.

AU - Veit, P.

N1 - Funding Information: Financial support by the Deutsche Forschungsgemeinschaft, the Kultusministerium of Sachsen-Anhalt and the US Army Research Office is gratefully acknowledged.

PY - 1998/5

Y1 - 1998/5

N2 - Rapid thermal annealing of amorphous Si/SiO2 superlattices deposited by rf-sputtering and plasma oxidation forms Si nanocrystals while maintaining the superlattice structure. The crystal size is controlled by the thickness of the Si sublayers and can be varied from 12 nm to ∼ 2.5 nm. The strain in the c-Si/SiO2 structure is released by annealing at 1050°C using a slow temperature ramp. After wet oxidation which reduces the size and completes the passivation of the crystals by SiO2, the room-temperature band-edge photoluminescence reaches an external quantum efficiency >0.1%.

AB - Rapid thermal annealing of amorphous Si/SiO2 superlattices deposited by rf-sputtering and plasma oxidation forms Si nanocrystals while maintaining the superlattice structure. The crystal size is controlled by the thickness of the Si sublayers and can be varied from 12 nm to ∼ 2.5 nm. The strain in the c-Si/SiO2 structure is released by annealing at 1050°C using a slow temperature ramp. After wet oxidation which reduces the size and completes the passivation of the crystals by SiO2, the room-temperature band-edge photoluminescence reaches an external quantum efficiency >0.1%.

KW - Plasma oxidation

KW - Radio frequency sputtering

KW - Si crystals

UR - http://www.scopus.com/inward/record.url?scp=0032065203&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0032065203&partnerID=8YFLogxK

U2 - 10.1016/S0022-3093(98)00287-7

DO - 10.1016/S0022-3093(98)00287-7

M3 - Article

AN - SCOPUS:0032065203

SN - 0022-3093

VL - 227-230

SP - 1132

EP - 1136

JO - Journal of Non-Crystalline Solids

JF - Journal of Non-Crystalline Solids

IS - PART 2

ER -

Nanocrystalline silicon superlattices: Fabrication and characterization

Abstract

All Science Journal Classification (ASJC) codes

Keywords

Access to Document

Other files and links

Fingerprint

Cite this