Nanocrystalline silicon superlattices: Fabrication and characterization

M. Zacharias, L. Tsybeskov, K. D. Hirschman, P. M. Fauchet, J. Bläsing, P. Kohlert, P. Veit

Research output: Contribution to journalArticlepeer-review

28 Scopus citations

Abstract

Rapid thermal annealing of amorphous Si/SiO2 superlattices deposited by rf-sputtering and plasma oxidation forms Si nanocrystals while maintaining the superlattice structure. The crystal size is controlled by the thickness of the Si sublayers and can be varied from 12 nm to ∼ 2.5 nm. The strain in the c-Si/SiO2 structure is released by annealing at 1050°C using a slow temperature ramp. After wet oxidation which reduces the size and completes the passivation of the crystals by SiO2, the room-temperature band-edge photoluminescence reaches an external quantum efficiency >0.1%.

Original languageEnglish (US)
Pages (from-to)1132-1136
Number of pages5
JournalJournal of Non-Crystalline Solids
Volume227-230
Issue numberPART 2
DOIs
StatePublished - May 1998
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Ceramics and Composites
  • Condensed Matter Physics
  • Materials Chemistry

Keywords

  • Plasma oxidation
  • Radio frequency sputtering
  • Si crystals

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