Nanocrystalline silicon superlattices for nanoelectronic devices

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Scopus citations

Abstract

This paper provides a brief introduction to a novel nanostructured system consisting of ordered layers of Si nanocrystals separated by atomically flat and chemically abrupt layers of amorphous silicon dioxide with thickness of several nanometers. The unique structural, optical and electrical properties permitting unusual device application are discussed.

Original languageEnglish (US)
Title of host publication2002 International Conference on Computational Nanoscience and Nanotechnology - ICCN 2002
EditorsM. Laudon, B. Romanowicz
Pages304-307
Number of pages4
StatePublished - Dec 1 2002
Event2002 International Conference on Computational Nanoscience and Nanotechnology - ICCN 2002 - San Juan, Puerto Rico
Duration: Apr 21 2002Apr 25 2002

Publication series

Name2002 International Conference on Computational Nanoscience and Nanotechnology - ICCN 2002

Other

Other2002 International Conference on Computational Nanoscience and Nanotechnology - ICCN 2002
CountryPuerto Rico
CitySan Juan
Period4/21/024/25/02

All Science Journal Classification (ASJC) codes

  • Engineering(all)

Fingerprint Dive into the research topics of 'Nanocrystalline silicon superlattices for nanoelectronic devices'. Together they form a unique fingerprint.

Cite this