Abstract
Although porous silicon has received the most attention over the last 5 years, other structures containing Si nanocrystallites have recently been shown to emit strong luminescence at room temperature. This presentation reviews the state-of-the-art in the preparation and properties of silicon quantum dot structures, and their use in electroluminescent devices. The materials science and the structural, chemical, electrical, and optical properties of both porous silicon and recrystallized silicon superlattices are discussed. The fabrication of light-emitting devices consisting of these two types of nanoscale silicon materials is then described. Finally, the present and projected stability, efficiency, and speed of these LEDS is reviewed and their integration with silicon microelectronic driver circuits demonstrated.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 793-807 |
| Number of pages | 15 |
| Journal | Proceedings of SPIE - The International Society for Optical Engineering |
| Volume | 3283 |
| DOIs | |
| State | Published - 1998 |
| Externally published | Yes |
| Event | Physics and Simulation of Optoelectronic Devices VI - San Jose, CA, United States Duration: Jan 26 1998 → Jan 26 1998 |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Computer Science Applications
- Applied Mathematics
- Electrical and Electronic Engineering
Keywords
- Display
- Electroluminescence
- Light-emitting diode
- Nanocrystalline silicon superlattice
- Nanocrystallite
- Photoluminescence
- Porous silicon
- Silicon