Nanoscale silicon for electroluminescent devices

Philippe M. Fauchet, Leonid Tsybeskov

Research output: Contribution to journalConference articlepeer-review

2 Scopus citations

Abstract

Although porous silicon has received the most attention over the last 5 years, other structures containing Si nanocrystallites have recently been shown to emit strong luminescence at room temperature. This presentation reviews the state-of-the-art in the preparation and properties of silicon quantum dot structures, and their use in electroluminescent devices. The materials science and the structural, chemical, electrical, and optical properties of both porous silicon and recrystallized silicon superlattices are discussed. The fabrication of light-emitting devices consisting of these two types of nanoscale silicon materials is then described. Finally, the present and projected stability, efficiency, and speed of these LEDS is reviewed and their integration with silicon microelectronic driver circuits demonstrated.

Original languageEnglish (US)
Pages (from-to)793-807
Number of pages15
JournalProceedings of SPIE - The International Society for Optical Engineering
Volume3283
DOIs
StatePublished - Dec 1 1998
Externally publishedYes
EventPhysics and Simulation of Optoelectronic Devices VI - San Jose, CA, United States
Duration: Jan 26 1998Jan 26 1998

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

Keywords

  • Display
  • Electroluminescence
  • Light-emitting diode
  • Nanocrystalline silicon superlattice
  • Nanocrystallite
  • Photoluminescence
  • Porous silicon
  • Silicon

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