Natural frequency shift of rectangular torsion actuators due to electrostatic force

Zhixiong Xiao, Yan Sun, Baoqing Li, Sanghui Lee, Karmjit S. Sidhu, Ken K. Chin, K. R. Farmer

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Scopus citations

Abstract

We have investigated the effect of natural frequency shift in single-crystal silicon, rectangular, electrostatic torsion actuators due to the electrostatic force. The electrostatic actuator was fabricated by using ultra-thin silicon wafer, SU-8 thermal compression bonding, and deep reactive ion etching. Natural frequency and Q factor of the actuator were tested in a high vacuum ambient. An analytical model was proposed to simulate the effect of natural frequency shift due to the electrostatic force. It showed that the natural frequency decreased with the increase in applied voltage, which could be used to tune the natural frequency of the torsion actuator. At a voltage near pull-in, the natural frequency was close to zero due to the negative electrostatic spring constant. The pull-in curve of the actuator was tested in air. Good agreement was found by comparing the results of analytical model with those of Coventor 2001 finite element analysis software and experiments.

Original languageEnglish (US)
Title of host publication2004 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2004
EditorsM. Laudon, B. Romanowicz
Pages426-429
Number of pages4
StatePublished - 2004
Event2004 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2004 - Boston, MA, United States
Duration: Mar 7 2004Mar 11 2004

Publication series

Name2004 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2004
Volume1

Other

Other2004 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2004
CountryUnited States
CityBoston, MA
Period3/7/043/11/04

All Science Journal Classification (ASJC) codes

  • Engineering(all)

Keywords

  • Electrostatic torsion actuator
  • Natural frequency shift
  • Pull-in
  • SU-8 bonding
  • Ultra-thin silicon wafer

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