Abstract
In summary, comparison of NBTI characteristics in Al/HfO2/Ge with nitrided and non-nitrided Ge surface at high temperatures (125° C) reveals that nitridation creates additional bulk traps even though shows initial improvements. We, therefore, noticed that nitrided Ge has higher ΔV FB shift and stress induced leakage current than nonnitrided samples. NBTI degradation of nitrided germanium surface is also consistent with literature regarding NBTI on nitrided Si devices. Optimization on nitrogen content and nitridation procedure may improve sensitivity to NBTI.
Original language | English (US) |
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Title of host publication | 46th Annual 2008 IEEE International Reliability Physics Symposium Proceedings, IRPS |
Pages | 653-654 |
Number of pages | 2 |
DOIs | |
State | Published - Sep 17 2008 |
Event | 46th Annual 2008 IEEE International Reliability Physics Symposium, IRPS - Phoenix, AZ, United States Duration: Apr 27 2008 → May 1 2008 |
Other
Other | 46th Annual 2008 IEEE International Reliability Physics Symposium, IRPS |
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Country/Territory | United States |
City | Phoenix, AZ |
Period | 4/27/08 → 5/1/08 |
All Science Journal Classification (ASJC) codes
- Engineering(all)