TY - GEN
T1 - NBTI behavior of GE/HFO2/AL gate stacks
AU - Rahim, N.
AU - Misra, D.
PY - 2008
Y1 - 2008
N2 - In summary, comparison of NBTI characteristics in Al/HfO2/Ge with nitrided and non-nitrided Ge surface at high temperatures (125° C) reveals that nitridation creates additional bulk traps even though shows initial improvements. We, therefore, noticed that nitrided Ge has higher ΔV FB shift and stress induced leakage current than nonnitrided samples. NBTI degradation of nitrided germanium surface is also consistent with literature regarding NBTI on nitrided Si devices. Optimization on nitrogen content and nitridation procedure may improve sensitivity to NBTI.
AB - In summary, comparison of NBTI characteristics in Al/HfO2/Ge with nitrided and non-nitrided Ge surface at high temperatures (125° C) reveals that nitridation creates additional bulk traps even though shows initial improvements. We, therefore, noticed that nitrided Ge has higher ΔV FB shift and stress induced leakage current than nonnitrided samples. NBTI degradation of nitrided germanium surface is also consistent with literature regarding NBTI on nitrided Si devices. Optimization on nitrogen content and nitridation procedure may improve sensitivity to NBTI.
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U2 - 10.1109/RELPHY.2008.4558972
DO - 10.1109/RELPHY.2008.4558972
M3 - Conference contribution
AN - SCOPUS:51549121825
SN - 9781424420506
T3 - IEEE International Reliability Physics Symposium Proceedings
SP - 653
EP - 654
BT - 46th Annual 2008 IEEE International Reliability Physics Symposium Proceedings, IRPS
T2 - 46th Annual 2008 IEEE International Reliability Physics Symposium, IRPS
Y2 - 27 April 2008 through 1 May 2008
ER -