NBTI behavior of GE/HFO2/AL gate stacks

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Scopus citations

Abstract

In summary, comparison of NBTI characteristics in Al/HfO2/Ge with nitrided and non-nitrided Ge surface at high temperatures (125° C) reveals that nitridation creates additional bulk traps even though shows initial improvements. We, therefore, noticed that nitrided Ge has higher ΔV FB shift and stress induced leakage current than nonnitrided samples. NBTI degradation of nitrided germanium surface is also consistent with literature regarding NBTI on nitrided Si devices. Optimization on nitrogen content and nitridation procedure may improve sensitivity to NBTI.

Original languageEnglish (US)
Title of host publication46th Annual 2008 IEEE International Reliability Physics Symposium Proceedings, IRPS
Pages653-654
Number of pages2
DOIs
StatePublished - Sep 17 2008
Event46th Annual 2008 IEEE International Reliability Physics Symposium, IRPS - Phoenix, AZ, United States
Duration: Apr 27 2008May 1 2008

Other

Other46th Annual 2008 IEEE International Reliability Physics Symposium, IRPS
Country/TerritoryUnited States
CityPhoenix, AZ
Period4/27/085/1/08

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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