NBTI behavior of GE/HFO2/AL gate stacks

N. Rahim; Durgamadhab Misra

doi:10.1109/RELPHY.2008.4558972

NBTI behavior of GE/HFO₂/AL gate stacks

N. Rahim, Durgamadhab Misra

Electrical and Computer Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

2 Scopus citations

Abstract

In summary, comparison of NBTI characteristics in Al/HfO₂/Ge with nitrided and non-nitrided Ge surface at high temperatures (125° C) reveals that nitridation creates additional bulk traps even though shows initial improvements. We, therefore, noticed that nitrided Ge has higher ΔV _FB shift and stress induced leakage current than nonnitrided samples. NBTI degradation of nitrided germanium surface is also consistent with literature regarding NBTI on nitrided Si devices. Optimization on nitrogen content and nitridation procedure may improve sensitivity to NBTI.

Original language	English (US)
Title of host publication	46th Annual 2008 IEEE International Reliability Physics Symposium Proceedings, IRPS
Pages	653-654
Number of pages	2
DOIs	https://doi.org/10.1109/RELPHY.2008.4558972
State	Published - Sep 17 2008
Event	46th Annual 2008 IEEE International Reliability Physics Symposium, IRPS - Phoenix, AZ, United States Duration: Apr 27 2008 → May 1 2008

Other

Other	46th Annual 2008 IEEE International Reliability Physics Symposium, IRPS
Country/Territory	United States
City	Phoenix, AZ
Period	4/27/08 → 5/1/08

All Science Journal Classification (ASJC) codes

Engineering(all)

Access to Document

10.1109/RELPHY.2008.4558972

Cite this

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title = "NBTI behavior of GE/HFO2/AL gate stacks",

abstract = "In summary, comparison of NBTI characteristics in Al/HfO2/Ge with nitrided and non-nitrided Ge surface at high temperatures (125° C) reveals that nitridation creates additional bulk traps even though shows initial improvements. We, therefore, noticed that nitrided Ge has higher ΔV FB shift and stress induced leakage current than nonnitrided samples. NBTI degradation of nitrided germanium surface is also consistent with literature regarding NBTI on nitrided Si devices. Optimization on nitrogen content and nitridation procedure may improve sensitivity to NBTI.",

author = "N. Rahim and Durgamadhab Misra",

year = "2008",

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doi = "10.1109/RELPHY.2008.4558972",

language = "English (US)",

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note = "46th Annual 2008 IEEE International Reliability Physics Symposium, IRPS ; Conference date: 27-04-2008 Through 01-05-2008",

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AU - Rahim, N.

AU - Misra, Durgamadhab

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N2 - In summary, comparison of NBTI characteristics in Al/HfO2/Ge with nitrided and non-nitrided Ge surface at high temperatures (125° C) reveals that nitridation creates additional bulk traps even though shows initial improvements. We, therefore, noticed that nitrided Ge has higher ΔV FB shift and stress induced leakage current than nonnitrided samples. NBTI degradation of nitrided germanium surface is also consistent with literature regarding NBTI on nitrided Si devices. Optimization on nitrogen content and nitridation procedure may improve sensitivity to NBTI.

AB - In summary, comparison of NBTI characteristics in Al/HfO2/Ge with nitrided and non-nitrided Ge surface at high temperatures (125° C) reveals that nitridation creates additional bulk traps even though shows initial improvements. We, therefore, noticed that nitrided Ge has higher ΔV FB shift and stress induced leakage current than nonnitrided samples. NBTI degradation of nitrided germanium surface is also consistent with literature regarding NBTI on nitrided Si devices. Optimization on nitrogen content and nitridation procedure may improve sensitivity to NBTI.

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