Near-infrared InN nanowire optoelectronic devices on Si

Songrui Zhao, Hieu Pham Trung Nguyen, Zetian Mi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Scopus citations

Abstract

In this work, InN nanowire photo detectors on a Si platform were investigated, and a light response up to 1.55 μm was observed at room temperature. InN nanowire light sources on Si are also discussed.

Original languageEnglish (US)
Title of host publicationProceedings - 2014 Summer Topicals Meeting Series, SUM 2014
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages208-209
Number of pages2
ISBN (Electronic)9781479927678
DOIs
StatePublished - Sep 18 2014
Externally publishedYes
Event2014 Summer Topicals Meeting Series, SUM 2014 - Montreal, Canada
Duration: Jul 14 2014Jul 16 2014

Publication series

NameProceedings - 2014 Summer Topicals Meeting Series, SUM 2014

Other

Other2014 Summer Topicals Meeting Series, SUM 2014
Country/TerritoryCanada
CityMontreal
Period7/14/147/16/14

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Atomic and Molecular Physics, and Optics
  • Electronic, Optical and Magnetic Materials
  • Signal Processing

Keywords

  • InN nanowires
  • Si
  • optoelectronic devices

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