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Keyphrases
Gate Stack
100%
Negative Bias Temperature Instability
100%
Hf-silicate
100%
Bias Conditions
100%
Silica
66%
High Bias
66%
Reaction-diffusion Model
33%
Low Bias
33%
Annealing
33%
Work Study
33%
MOSFET
33%
P-channel
33%
Elevated Temperature
33%
Interfacial Layer
33%
Bond Breaking
33%
Threshold Voltage Shift
33%
Si-H Bonds
33%
Dissociation
33%
Electric Field Dependence
33%
Oxide Field
33%
Interface Generation
33%
Impact Ionization
33%
Bulk Trap Generation
33%
H-condition
33%
Positively Charged
33%
Interface States
33%
Gate Bias
33%
Generation Shift
33%
Elevated Temperature Condition
33%
Hot Holes
33%
Voltage Shift
33%
Engineering
Gate Stack
100%
Negative-Bias Temperature Instability
100%
Elevated Temperature
66%
Interface State
66%
Electric Field
33%
Interfacial Layer
33%
Temperature Condition
33%
Reaction-Diffusion Model
33%
Initial Time
33%
Si Interface
33%
Impact Ionization
33%
Gate Bias
33%
Earth and Planetary Sciences
Electric Field
100%
Silicate
100%
Threshold Voltage
100%
Physics
Electric Fields
100%
Threshold Voltage
100%