New features of the temperature dependence of photoconductivity in plasma-deposited hydrogenated amorphous silicon alloys

P. E. Vanier, A. E. Delahoy, R. W. Griffith

Research output: Contribution to journalArticlepeer-review

73 Scopus citations

Abstract

The temperature and flux dependences of photoconductivity have been investigated for plasma-deposited hydrogenated amorphous silicon alloys produced under a variety of processing conditions. In undoped films, new features such as thermal quenching and supralinearity are observed. Such behavior is critically dependent on the position of the Fermi level, and is not observed in alloys doped by the addition to the plasma of PH3, B 2H6, O2+N2 mixtures, or air. Interpretation of the data is based on a model of competing recombination centers.

Original languageEnglish (US)
Pages (from-to)5235-5242
Number of pages8
JournalJournal of Applied Physics
Volume52
Issue number8
DOIs
StatePublished - 1981

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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