New technologies for CIGS photovoltaics

Alan E. Delahoy; Liangfan Chen; Masud Akhtar; Baosheng Sang; Sheyu Guo

doi:10.1016/j.solener.2004.08.012

New technologies for CIGS photovoltaics

Alan E. Delahoy, Liangfan Chen, Masud Akhtar, Baosheng Sang, Sheyu Guo

Research output: Contribution to journal › Article › peer-review

108 Scopus citations

Abstract

This paper describes a new process for forming Cu(In,Ga)Se₂ (CIGS) by vacuum processing. It is termed the hybrid process, and it involves thermal delivery of In, Ga, and Se and sputtering of Cu. The optimization of the process is described, followed by its successful application to large area processing of CIGS devices and modules. Other processing issues in module formation are also discussed and analyzed, including deposition of the buffer and window layers, and interconnect resistance. The paper also describes the application of a new sputtering process for compound film formation to the area of CIGS processing. This process is termed reactive environment sputtering, and is based on a hollow cathode discharge. The process is applied to the formation of transparent conducting oxides (TCO) such as ZnO:Al, ZnO:B, In ₂O₃:Mo (IMO) and In₂O₃:Ti (ITiO), and to their use as window layers for CIGS devices.

Original language	English (US)
Pages (from-to)	785-793
Number of pages	9
Journal	Solar Energy
Volume	77
Issue number	6
DOIs	https://doi.org/10.1016/j.solener.2004.08.012
State	Published - Dec 2004
Externally published	Yes

All Science Journal Classification (ASJC) codes

Renewable Energy, Sustainability and the Environment
General Materials Science

Keywords

CIGS
Cu sputtering
Cu(In,Ga)Se
Hollow cathode sputtering
Hybrid process
PV modules
Photovoltaics
Thin films
Transparent conductors
Window layers

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10.1016/j.solener.2004.08.012

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@article{798588db50084de3add30ab679b52bf9,

title = "New technologies for CIGS photovoltaics",

abstract = "This paper describes a new process for forming Cu(In,Ga)Se2 (CIGS) by vacuum processing. It is termed the hybrid process, and it involves thermal delivery of In, Ga, and Se and sputtering of Cu. The optimization of the process is described, followed by its successful application to large area processing of CIGS devices and modules. Other processing issues in module formation are also discussed and analyzed, including deposition of the buffer and window layers, and interconnect resistance. The paper also describes the application of a new sputtering process for compound film formation to the area of CIGS processing. This process is termed reactive environment sputtering, and is based on a hollow cathode discharge. The process is applied to the formation of transparent conducting oxides (TCO) such as ZnO:Al, ZnO:B, In 2O3:Mo (IMO) and In2O3:Ti (ITiO), and to their use as window layers for CIGS devices.",

keywords = "CIGS, Cu sputtering, Cu(In,Ga)Se, Hollow cathode sputtering, Hybrid process, PV modules, Photovoltaics, Thin films, Transparent conductors, Window layers",

author = "Delahoy, {Alan E.} and Liangfan Chen and Masud Akhtar and Baosheng Sang and Sheyu Guo",

note = "Funding Information: We would like to thank J. Cambridge, R. Govindarajan, S. Kleindienst, R. Saramak, and F. Ziobro for technical assistance. The mobility and optical spectra of IMO were measured by Y. Yoshida (Colorado School of Mines) and T.J. Coutts (NREL). ITiO films were characterized by D. Ginley and co-workers (NREL). The CIGS work was supported in part by the U.S. DOE under subcontract No. ZDJ-2-30630-21 with NREL, and the initial development of hollow cathode sputtering by NIST under ATP award 70NANB0H3031. ",

year = "2004",

month = dec,

doi = "10.1016/j.solener.2004.08.012",

language = "English (US)",

volume = "77",

pages = "785--793",

journal = "Solar Energy",

issn = "0038-092X",

publisher = "Elsevier Limited",

number = "6",

}

TY - JOUR

T1 - New technologies for CIGS photovoltaics

AU - Delahoy, Alan E.

AU - Chen, Liangfan

AU - Akhtar, Masud

AU - Sang, Baosheng

AU - Guo, Sheyu

N1 - Funding Information: We would like to thank J. Cambridge, R. Govindarajan, S. Kleindienst, R. Saramak, and F. Ziobro for technical assistance. The mobility and optical spectra of IMO were measured by Y. Yoshida (Colorado School of Mines) and T.J. Coutts (NREL). ITiO films were characterized by D. Ginley and co-workers (NREL). The CIGS work was supported in part by the U.S. DOE under subcontract No. ZDJ-2-30630-21 with NREL, and the initial development of hollow cathode sputtering by NIST under ATP award 70NANB0H3031.

PY - 2004/12

Y1 - 2004/12

N2 - This paper describes a new process for forming Cu(In,Ga)Se2 (CIGS) by vacuum processing. It is termed the hybrid process, and it involves thermal delivery of In, Ga, and Se and sputtering of Cu. The optimization of the process is described, followed by its successful application to large area processing of CIGS devices and modules. Other processing issues in module formation are also discussed and analyzed, including deposition of the buffer and window layers, and interconnect resistance. The paper also describes the application of a new sputtering process for compound film formation to the area of CIGS processing. This process is termed reactive environment sputtering, and is based on a hollow cathode discharge. The process is applied to the formation of transparent conducting oxides (TCO) such as ZnO:Al, ZnO:B, In 2O3:Mo (IMO) and In2O3:Ti (ITiO), and to their use as window layers for CIGS devices.

AB - This paper describes a new process for forming Cu(In,Ga)Se2 (CIGS) by vacuum processing. It is termed the hybrid process, and it involves thermal delivery of In, Ga, and Se and sputtering of Cu. The optimization of the process is described, followed by its successful application to large area processing of CIGS devices and modules. Other processing issues in module formation are also discussed and analyzed, including deposition of the buffer and window layers, and interconnect resistance. The paper also describes the application of a new sputtering process for compound film formation to the area of CIGS processing. This process is termed reactive environment sputtering, and is based on a hollow cathode discharge. The process is applied to the formation of transparent conducting oxides (TCO) such as ZnO:Al, ZnO:B, In 2O3:Mo (IMO) and In2O3:Ti (ITiO), and to their use as window layers for CIGS devices.

KW - CIGS

KW - Cu sputtering

KW - Cu(In,Ga)Se

KW - Hollow cathode sputtering

KW - Hybrid process

KW - PV modules

KW - Photovoltaics

KW - Thin films

KW - Transparent conductors

KW - Window layers

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DO - 10.1016/j.solener.2004.08.012

M3 - Article

AN - SCOPUS:9944235498

SN - 0038-092X

VL - 77

SP - 785

EP - 793

JO - Solar Energy

JF - Solar Energy

IS - 6

ER -

New technologies for CIGS photovoltaics

Abstract

All Science Journal Classification (ASJC) codes

Keywords

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