Nitrogen doped ZnO (ZnO:N) thin films deposited by reactive RF agnetron sputtering for PEC applications

Sudhakar Shet; Kwang Soon Ahn; Nuggehalli Ravindra; Yanfa Yan; Mowafak Al-Jassim

Nitrogen doped ZnO (ZnO:N) thin films deposited by reactive RF agnetron sputtering for PEC applications

Sudhakar Shet, Kwang Soon Ahn, Nuggehalli Ravindra, Yanfa Yan, Mowafak Al-Jassim

Physics

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

ZnO:N films were deposited by reactive RF magnetron sputtering on F-doped tin oxide coated glass substrates in mixed N₂ and O₂ gas ambient. Their PEC properties were measured and compared with those of as-deposited and annealed ZnO films. The ZnO:N films exhibit photoresponse in the visible-light region, yielding higher total photocurrents than ZnO thin films. ZnO:N thin films with reduced bandgaps were synthesized by reactive RF magnetron sputtering using ZnO target at 100°C followed by post deposition annealing at 500°C in air for 2 h. ZnO:N thin films showed enhanced N incorporation and shift of the optical absorption into the visible light regions. As a result, ZnO:N films showed improved PEC response, compared to ZnO thin films.

Original language	English (US)
Title of host publication	Materials Processing and Interfaces
Publisher	Minerals, Metals and Materials Society
Pages	669-676
Number of pages	8
ISBN (Print)	9781118296073
State	Published - 2012
Event	141st Annual Meeting and Exhibition, TMS 2012 - Orlando, FL, United States Duration: Mar 11 2012 → Mar 15 2012

Publication series

Name	TMS Annual Meeting
Volume	1

Other

Other	141st Annual Meeting and Exhibition, TMS 2012
Country/Territory	United States
City	Orlando, FL
Period	3/11/12 → 3/15/12

All Science Journal Classification (ASJC) codes

Condensed Matter Physics
Mechanics of Materials
Metals and Alloys

Keywords

N-doping
Photoelectrochemical
Thin film

Cite this

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title = "Nitrogen doped ZnO (ZnO:N) thin films deposited by reactive RF agnetron sputtering for PEC applications",

abstract = "ZnO:N films were deposited by reactive RF magnetron sputtering on F-doped tin oxide coated glass substrates in mixed N2 and O2 gas ambient. Their PEC properties were measured and compared with those of as-deposited and annealed ZnO films. The ZnO:N films exhibit photoresponse in the visible-light region, yielding higher total photocurrents than ZnO thin films. ZnO:N thin films with reduced bandgaps were synthesized by reactive RF magnetron sputtering using ZnO target at 100°C followed by post deposition annealing at 500°C in air for 2 h. ZnO:N thin films showed enhanced N incorporation and shift of the optical absorption into the visible light regions. As a result, ZnO:N films showed improved PEC response, compared to ZnO thin films.",

keywords = "N-doping, Photoelectrochemical, Thin film",

author = "Sudhakar Shet and Ahn, {Kwang Soon} and Nuggehalli Ravindra and Yanfa Yan and Mowafak Al-Jassim",

year = "2012",

language = "English (US)",

isbn = "9781118296073",

series = "TMS Annual Meeting",

publisher = "Minerals, Metals and Materials Society",

pages = "669--676",

booktitle = "Materials Processing and Interfaces",

address = "United States",

note = "141st Annual Meeting and Exhibition, TMS 2012 ; Conference date: 11-03-2012 Through 15-03-2012",

}

Nitrogen doped ZnO (ZnO:N) thin films deposited by reactive RF agnetron sputtering for PEC applications. / Shet, Sudhakar; Ahn, Kwang Soon; Ravindra, Nuggehalli et al.
Materials Processing and Interfaces. Minerals, Metals and Materials Society, 2012. p. 669-676 (TMS Annual Meeting; Vol. 1).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - Nitrogen doped ZnO (ZnO:N) thin films deposited by reactive RF agnetron sputtering for PEC applications

AU - Shet, Sudhakar

AU - Ahn, Kwang Soon

AU - Ravindra, Nuggehalli

AU - Yan, Yanfa

AU - Al-Jassim, Mowafak

PY - 2012

Y1 - 2012

N2 - ZnO:N films were deposited by reactive RF magnetron sputtering on F-doped tin oxide coated glass substrates in mixed N2 and O2 gas ambient. Their PEC properties were measured and compared with those of as-deposited and annealed ZnO films. The ZnO:N films exhibit photoresponse in the visible-light region, yielding higher total photocurrents than ZnO thin films. ZnO:N thin films with reduced bandgaps were synthesized by reactive RF magnetron sputtering using ZnO target at 100°C followed by post deposition annealing at 500°C in air for 2 h. ZnO:N thin films showed enhanced N incorporation and shift of the optical absorption into the visible light regions. As a result, ZnO:N films showed improved PEC response, compared to ZnO thin films.

AB - ZnO:N films were deposited by reactive RF magnetron sputtering on F-doped tin oxide coated glass substrates in mixed N2 and O2 gas ambient. Their PEC properties were measured and compared with those of as-deposited and annealed ZnO films. The ZnO:N films exhibit photoresponse in the visible-light region, yielding higher total photocurrents than ZnO thin films. ZnO:N thin films with reduced bandgaps were synthesized by reactive RF magnetron sputtering using ZnO target at 100°C followed by post deposition annealing at 500°C in air for 2 h. ZnO:N thin films showed enhanced N incorporation and shift of the optical absorption into the visible light regions. As a result, ZnO:N films showed improved PEC response, compared to ZnO thin films.

KW - N-doping

KW - Photoelectrochemical

KW - Thin film

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M3 - Conference contribution

AN - SCOPUS:84860842869

SN - 9781118296073

T3 - TMS Annual Meeting

SP - 669

EP - 676

BT - Materials Processing and Interfaces

PB - Minerals, Metals and Materials Society

T2 - 141st Annual Meeting and Exhibition, TMS 2012

Y2 - 11 March 2012 through 15 March 2012

ER -

Nitrogen doped ZnO (ZnO:N) thin films deposited by reactive RF agnetron sputtering for PEC applications

Abstract

Publication series

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All Science Journal Classification (ASJC) codes

Keywords

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