Nitrogen doped ZnO (ZnO:N) thin films deposited by reactive RF agnetron sputtering for PEC applications

Sudhakar Shet, Kwang Soon Ahn, N. Ravindra, Yanfa Yan, Mowafak Al-Jassim

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

ZnO:N films were deposited by reactive RF magnetron sputtering on F-doped tin oxide coated glass substrates in mixed N2 and O2 gas ambient. Their PEC properties were measured and compared with those of as-deposited and annealed ZnO films. The ZnO:N films exhibit photoresponse in the visible-light region, yielding higher total photocurrents than ZnO thin films. ZnO:N thin films with reduced bandgaps were synthesized by reactive RF magnetron sputtering using ZnO target at 100°C followed by post deposition annealing at 500°C in air for 2 h. ZnO:N thin films showed enhanced N incorporation and shift of the optical absorption into the visible light regions. As a result, ZnO:N films showed improved PEC response, compared to ZnO thin films.

Original languageEnglish (US)
Title of host publicationMaterials Processing and Interfaces
PublisherMinerals, Metals and Materials Society
Pages669-676
Number of pages8
Volume1
ISBN (Print)9781118296073
StatePublished - Jan 1 2012
Event141st Annual Meeting and Exhibition, TMS 2012 - Orlando, FL, United States
Duration: Mar 11 2012Mar 15 2012

Other

Other141st Annual Meeting and Exhibition, TMS 2012
CountryUnited States
CityOrlando, FL
Period3/11/123/15/12

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Mechanics of Materials
  • Metals and Alloys

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