We observe a rapid temperature variation and an electric field dependence of the d.c. conductivity in a carefully characterized sample of P doped Si. These results, combined with measurements of Raman scattering, far-infrared absorption and magnetic susceptibility, indicate a large characteristic electronic length (104 times the donor Bohr radius) at a donor concentration just below the critical density of the metal-insulator transition.
|Original language||English (US)|
|Number of pages||4|
|Journal||Solid State Communications|
|State||Published - Jan 1 1980|
All Science Journal Classification (ASJC) codes
- Condensed Matter Physics
- Materials Chemistry