Non-ohmic conductivity of barely localized electrons in three dimensions

T. F. Rosenbaum; K. Andres; G. A. Thomas

doi:10.1016/0038-1098(80)90869-8

Non-ohmic conductivity of barely localized electrons in three dimensions

T. F. Rosenbaum, K. Andres, G. A. Thomas

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53 Scopus citations

Abstract

We observe a rapid temperature variation and an electric field dependence of the d.c. conductivity in a carefully characterized sample of P doped Si. These results, combined with measurements of Raman scattering, far-infrared absorption and magnetic susceptibility, indicate a large characteristic electronic length (10⁴ times the donor Bohr radius) at a donor concentration just below the critical density of the metal-insulator transition.

Original language	English (US)
Pages (from-to)	663-666
Number of pages	4
Journal	Solid State Communications
Volume	35
Issue number	9
DOIs	https://doi.org/10.1016/0038-1098(80)90869-8
State	Published - 1980
Externally published	Yes

All Science Journal Classification (ASJC) codes

General Chemistry
Condensed Matter Physics
Materials Chemistry

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10.1016/0038-1098(80)90869-8

Cite this

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title = "Non-ohmic conductivity of barely localized electrons in three dimensions",

abstract = "We observe a rapid temperature variation and an electric field dependence of the d.c. conductivity in a carefully characterized sample of P doped Si. These results, combined with measurements of Raman scattering, far-infrared absorption and magnetic susceptibility, indicate a large characteristic electronic length (104 times the donor Bohr radius) at a donor concentration just below the critical density of the metal-insulator transition.",

author = "Rosenbaum, {T. F.} and K. Andres and Thomas, {G. A.}",

year = "1980",

doi = "10.1016/0038-1098(80)90869-8",

language = "English (US)",

volume = "35",

pages = "663--666",

journal = "Solid State Communications",

issn = "0038-1098",

publisher = "Elsevier Ltd",

number = "9",

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TY - JOUR

T1 - Non-ohmic conductivity of barely localized electrons in three dimensions

AU - Rosenbaum, T. F.

AU - Andres, K.

AU - Thomas, G. A.

PY - 1980

Y1 - 1980

N2 - We observe a rapid temperature variation and an electric field dependence of the d.c. conductivity in a carefully characterized sample of P doped Si. These results, combined with measurements of Raman scattering, far-infrared absorption and magnetic susceptibility, indicate a large characteristic electronic length (104 times the donor Bohr radius) at a donor concentration just below the critical density of the metal-insulator transition.

AB - We observe a rapid temperature variation and an electric field dependence of the d.c. conductivity in a carefully characterized sample of P doped Si. These results, combined with measurements of Raman scattering, far-infrared absorption and magnetic susceptibility, indicate a large characteristic electronic length (104 times the donor Bohr radius) at a donor concentration just below the critical density of the metal-insulator transition.

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UR - http://www.scopus.com/inward/citedby.url?scp=0019056783&partnerID=8YFLogxK

U2 - 10.1016/0038-1098(80)90869-8

DO - 10.1016/0038-1098(80)90869-8

M3 - Article

AN - SCOPUS:0019056783

SN - 0038-1098

VL - 35

SP - 663

EP - 666

JO - Solid State Communications

JF - Solid State Communications

IS - 9

ER -

Non-ohmic conductivity of barely localized electrons in three dimensions

Abstract

All Science Journal Classification (ASJC) codes

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