Abstract
We observe a rapid temperature variation and an electric field dependence of the d.c. conductivity in a carefully characterized sample of P doped Si. These results, combined with measurements of Raman scattering, far-infrared absorption and magnetic susceptibility, indicate a large characteristic electronic length (104 times the donor Bohr radius) at a donor concentration just below the critical density of the metal-insulator transition.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 663-666 |
| Number of pages | 4 |
| Journal | Solid State Communications |
| Volume | 35 |
| Issue number | 9 |
| DOIs | |
| State | Published - 1980 |
| Externally published | Yes |
All Science Journal Classification (ASJC) codes
- General Chemistry
- Condensed Matter Physics
- Materials Chemistry