Nondestructive mapping of chemical composition and structural qualities of group III-nitride nanowires using submicron beam synchrotron-based X-ray diffraction

P. L. Bonanno, S. Gautier, Y. El Gmili, T. Moudakir, A. A. Sirenko, A. Kazimirov, Z. H. Cai, J. Martin, W. H. Goh, A. Martinez, A. Ramdane, L. Le Gratiet, N. Maloufi, M. B. Assouar, A. Ougazzaden

Research output: Contribution to journalArticlepeer-review

2 Scopus citations

Abstract

Submicron beam synchrotron-based X-ray diffraction (XRD) techniques have been developed and used to accurately and nondestructively map chemical composition and material quality of selectively grown group III-nitride nanowires. GaN, AlGaN, and InGaN multi-quantum-well nanowires have been selectively grown on lattice matched and mismatched substrates, and the challenges associated with obtaining and interpreting submicron beam XRD results are addressed and solved. Nanoscale cathodoluminescence is used to examine exciton behavior, and energy-dispersive X-ray spectroscopy is used to verify chemical composition. Scanning transmission electron microscopy is later used to paint a more complete picture. The advantages of submicron beam XRD over other techniques are discussed in the context of this challenging material system.

Original languageEnglish (US)
Pages (from-to)46-50
Number of pages5
JournalThin Solid Films
Volume541
DOIs
StatePublished - Aug 31 2013

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

Keywords

  • GaN
  • MQW
  • Nano
  • Nanowire
  • Nondestructive
  • RSM
  • Synchrotron
  • X-ray diffraction

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