Large nonlinear susceptibilities for ion implanted silicon in fused silica are discussed. The samples were prepared by implanting Si into fused silica matrices followed by annealing at 1100 °C in flowing Ar and 4% H2. After annealing, the cluster size was found to be 5-6 nm. The refractive index of the composite material was calculated to be 2.2 while the absorption coefficient of these samples exhibit two resonances: a strong absorption peak centered near 400 nm and another weaker absorption centered at 580 nm.
|Original language||English (US)|
|Number of pages||2|
|Journal||IQEC, International Quantum Electronics Conference Proceedings|
|State||Published - Jan 1 1999|
All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)