Abstract
Large nonlinear susceptibilities for ion implanted silicon in fused silica are discussed. The samples were prepared by implanting Si into fused silica matrices followed by annealing at 1100 °C in flowing Ar and 4% H2. After annealing, the cluster size was found to be 5-6 nm. The refractive index of the composite material was calculated to be 2.2 while the absorption coefficient of these samples exhibit two resonances: a strong absorption peak centered near 400 nm and another weaker absorption centered at 580 nm.
Original language | English (US) |
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Pages (from-to) | 123-124 |
Number of pages | 2 |
Journal | IQEC, International Quantum Electronics Conference Proceedings |
State | Published - Jan 1 1999 |
All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)