Abstract
Large nonlinear susceptibilities for ion implanted silicon in fused silica are discussed. The samples were prepared by implanting Si into fused silica matrices followed by annealing at 1100 °C in flowing Ar and 4% H2. After annealing, the cluster size was found to be 5-6 nm. The refractive index of the composite material was calculated to be 2.2 while the absorption coefficient of these samples exhibit two resonances: a strong absorption peak centered near 400 nm and another weaker absorption centered at 580 nm.
| Original language | English (US) |
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| Pages | 123-124 |
| Number of pages | 2 |
| State | Published - 1999 |
| Event | Proceedings of the 1999 Quantum Electronics and Laser Science Conference (QELS '99) - Baltimore, MD, USA Duration: May 23 1999 → May 28 1999 |
Other
| Other | Proceedings of the 1999 Quantum Electronics and Laser Science Conference (QELS '99) |
|---|---|
| City | Baltimore, MD, USA |
| Period | 5/23/99 → 5/28/99 |
All Science Journal Classification (ASJC) codes
- General Physics and Astronomy