Abstract
The nonlinear optical properties of small nano-scale semiconducting silicon was investigated. Atomic force microscopy (AFM) was used to measure the size distribution of the clusters in three major size regions: Region I had the smallest size clusters in the range of 3-43 nm with a mean value at 7 nm and standard deviation of 3 nm; the `medium' clusters in Region II ranged between 5-42 nm with a mean value at 11 nm and standard deviation of 8 nm; and Region III has cluster size distribution from 15-85 nm with a mean value at 50 nm and standard deviation of 22 nm. The clusters of average size of 11 nm absorbed strongly at λ = 355 nm and possessed Re{χ(3)}>0 whereas clusters of all sizes adsorbed strongly at λ = 532 nm and exhibited Re{χ(3)}<0.
Original language | English (US) |
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Pages (from-to) | 113-114 |
Number of pages | 2 |
Journal | Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS |
Volume | 2 |
State | Published - 1997 |
Event | Proceedings of the 1997 10th IEEE Lasers and Electro-Optics Society Annual Meeting, LEOS. Part 2 (of 2) - San Francisco, CA, USA Duration: Nov 10 1997 → Nov 13 1997 |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering