Nonlinear optical properties of silicon nanoclusters

S. Vijayalakshmi, F. Shen, H. Grebel

Research output: Contribution to journalConference articlepeer-review

Abstract

The nonlinear optical properties of small nano-scale semiconducting silicon was investigated. Atomic force microscopy (AFM) was used to measure the size distribution of the clusters in three major size regions: Region I had the smallest size clusters in the range of 3-43 nm with a mean value at 7 nm and standard deviation of 3 nm; the `medium' clusters in Region II ranged between 5-42 nm with a mean value at 11 nm and standard deviation of 8 nm; and Region III has cluster size distribution from 15-85 nm with a mean value at 50 nm and standard deviation of 22 nm. The clusters of average size of 11 nm absorbed strongly at λ = 355 nm and possessed Re{χ(3)}>0 whereas clusters of all sizes adsorbed strongly at λ = 532 nm and exhibited Re{χ(3)}<0.

Original languageEnglish (US)
Pages (from-to)113-114
Number of pages2
JournalConference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS
Volume2
StatePublished - Dec 1 1997
EventProceedings of the 1997 10th IEEE Lasers and Electro-Optics Society Annual Meeting, LEOS. Part 2 (of 2) - San Francisco, CA, USA
Duration: Nov 10 1997Nov 13 1997

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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