Nonlinear optical properties of silicon nanoclusters

S. Vijayalakshmi, H. Grebel, J. F. Federici, A. M. Johnson

Research output: Contribution to conferencePaperpeer-review


Samples containing Si clusters were prepared using KrF laser ablation (λ = 248 nm, average power = 3 W, pulse duration = 8 ns, repetition rate 50 Hz) of a silicon wafer target in vacuum on a quartz substrate. Atomic force microscopy measured the size distribution of the clusters. Z-scan experiments were performed at λ = 355 and 532 nm to measure the linear refractive index. A pump-probe technique determined the temporal response of the nonlinearity at 355 and 532 nm. Si nanoclusters on quartz exhibits a strong nonlinearity at λ = 355 and 532 nm. The clusters of average size of 11 nm absorbs strongly at λ = 355 nm and possessed Re{χ(3)}>0, whereas the larger clusters of average size 50 nm absorbs strongly at λ = 532 nm and exhibits Re{χ(3)}<0.

Original languageEnglish (US)
Number of pages1
StatePublished - 1997
EventProceedings of the 1997 Conference on Quantum Electronics and Laser Science, QELS - Baltimore, MD, USA
Duration: May 18 1997May 23 1997


OtherProceedings of the 1997 Conference on Quantum Electronics and Laser Science, QELS
CityBaltimore, MD, USA

All Science Journal Classification (ASJC) codes

  • General Physics and Astronomy


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