Abstract
Samples containing Si clusters were prepared using KrF laser ablation (λ = 248 nm, average power = 3 W, pulse duration = 8 ns, repetition rate 50 Hz) of a silicon wafer target in vacuum on a quartz substrate. Atomic force microscopy measured the size distribution of the clusters. Z-scan experiments were performed at λ = 355 and 532 nm to measure the linear refractive index. A pump-probe technique determined the temporal response of the nonlinearity at 355 and 532 nm. Si nanoclusters on quartz exhibits a strong nonlinearity at λ = 355 and 532 nm. The clusters of average size of 11 nm absorbs strongly at λ = 355 nm and possessed Re{χ(3)}>0, whereas the larger clusters of average size 50 nm absorbs strongly at λ = 532 nm and exhibits Re{χ(3)}<0.
Original language | English (US) |
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Pages | 185 |
Number of pages | 1 |
State | Published - 1997 |
Event | Proceedings of the 1997 Conference on Quantum Electronics and Laser Science, QELS - Baltimore, MD, USA Duration: May 18 1997 → May 23 1997 |
Other
Other | Proceedings of the 1997 Conference on Quantum Electronics and Laser Science, QELS |
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City | Baltimore, MD, USA |
Period | 5/18/97 → 5/23/97 |
All Science Journal Classification (ASJC) codes
- General Physics and Astronomy