Nonlinear optics near the metal insulator transition

P. A. Wolff, S. Y. Yuen, G. A. Thomas

Research output: Contribution to journalArticlepeer-review

6 Scopus citations

Abstract

Large, free-carrier-induced, optical nonlinearities are observed in n-Si:P near the metal-insulator transition. X(3) varies superlinearly with n, suggesting an impurity interaction mechanism. A theory of the effect shows that it measures the pile-up of electron density at the impurities. The experiments imply that the pile-up varies rapidly with electron energy near the transition.

Original languageEnglish (US)
Pages (from-to)645-648
Number of pages4
JournalSolid State Communications
Volume60
Issue number8
DOIs
StatePublished - Nov 1986
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Condensed Matter Physics
  • Materials Chemistry

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