Abstract
Large, free-carrier-induced, optical nonlinearities are observed in n-Si:P near the metal-insulator transition. X(3) varies superlinearly with n, suggesting an impurity interaction mechanism. A theory of the effect shows that it measures the pile-up of electron density at the impurities. The experiments imply that the pile-up varies rapidly with electron energy near the transition.
Original language | English (US) |
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Pages (from-to) | 645-648 |
Number of pages | 4 |
Journal | Solid State Communications |
Volume | 60 |
Issue number | 8 |
DOIs | |
State | Published - Nov 1986 |
Externally published | Yes |
All Science Journal Classification (ASJC) codes
- General Chemistry
- Condensed Matter Physics
- Materials Chemistry