Large, free-carrier-induced, optical nonlinearities are observed in n-Si:P near the metal-insulator transition. X(3) varies superlinearly with n, suggesting an impurity interaction mechanism. A theory of the effect shows that it measures the pile-up of electron density at the impurities. The experiments imply that the pile-up varies rapidly with electron energy near the transition.
|Original language||English (US)|
|Number of pages||4|
|Journal||Solid State Communications|
|State||Published - Nov 1986|
All Science Journal Classification (ASJC) codes
- Condensed Matter Physics
- Materials Chemistry