Nonlinear optics near the metal insulator transition

P. A. Wolff; S. Y. Yuen; G. A. Thomas

doi:10.1016/0038-1098(86)90260-7

Nonlinear optics near the metal insulator transition

P. A. Wolff
, S. Y. Yuen
, G. A. Thomas

Research output: Contribution to journal › Article › peer-review

8 Scopus citations

Abstract

Large, free-carrier-induced, optical nonlinearities are observed in n-Si:P near the metal-insulator transition. _X⁽³⁾ varies superlinearly with n, suggesting an impurity interaction mechanism. A theory of the effect shows that it measures the pile-up of electron density at the impurities. The experiments imply that the pile-up varies rapidly with electron energy near the transition.

Original language	English (US)
Pages (from-to)	645-648
Number of pages	4
Journal	Solid State Communications
Volume	60
Issue number	8
DOIs	https://doi.org/10.1016/0038-1098(86)90260-7
State	Published - Nov 1986
Externally published	Yes

All Science Journal Classification (ASJC) codes

General Chemistry
Condensed Matter Physics
Materials Chemistry

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10.1016/0038-1098(86)90260-7

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@article{6408e6b5f525472aa36c62f65bfd0152,

title = "Nonlinear optics near the metal insulator transition",

abstract = "Large, free-carrier-induced, optical nonlinearities are observed in n-Si:P near the metal-insulator transition. X(3) varies superlinearly with n, suggesting an impurity interaction mechanism. A theory of the effect shows that it measures the pile-up of electron density at the impurities. The experiments imply that the pile-up varies rapidly with electron energy near the transition.",

author = "Wolff, \{P. A.\} and Yuen, \{S. Y.\} and Thomas, \{G. A.\}",

note = "Funding Information: Hidei Fukuyama, Marc Kastner, and Patrick Lee have made helpful suggestions concerning the interpretation of the experiments. We appreciate their advice and the discussions we have had with them. The MIT portion of this work was supported by the Air Force Office of Scientific Research, under Grant No. AFOSR-85-0269.",

year = "1986",

month = nov,

doi = "10.1016/0038-1098(86)90260-7",

language = "English (US)",

volume = "60",

pages = "645--648",

journal = "Solid State Communications",

issn = "0038-1098",

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T1 - Nonlinear optics near the metal insulator transition

AU - Wolff, P. A.

AU - Yuen, S. Y.

AU - Thomas, G. A.

N1 - Funding Information: Hidei Fukuyama, Marc Kastner, and Patrick Lee have made helpful suggestions concerning the interpretation of the experiments. We appreciate their advice and the discussions we have had with them. The MIT portion of this work was supported by the Air Force Office of Scientific Research, under Grant No. AFOSR-85-0269.

PY - 1986/11

Y1 - 1986/11

N2 - Large, free-carrier-induced, optical nonlinearities are observed in n-Si:P near the metal-insulator transition. X(3) varies superlinearly with n, suggesting an impurity interaction mechanism. A theory of the effect shows that it measures the pile-up of electron density at the impurities. The experiments imply that the pile-up varies rapidly with electron energy near the transition.

AB - Large, free-carrier-induced, optical nonlinearities are observed in n-Si:P near the metal-insulator transition. X(3) varies superlinearly with n, suggesting an impurity interaction mechanism. A theory of the effect shows that it measures the pile-up of electron density at the impurities. The experiments imply that the pile-up varies rapidly with electron energy near the transition.

UR - https://www.scopus.com/pages/publications/46149131301

UR - https://www.scopus.com/pages/publications/46149131301#tab=citedBy

U2 - 10.1016/0038-1098(86)90260-7

DO - 10.1016/0038-1098(86)90260-7

M3 - Article

AN - SCOPUS:46149131301

SN - 0038-1098

VL - 60

SP - 645

EP - 648

JO - Solid State Communications

JF - Solid State Communications

IS - 8

ER -

Nonlinear optics near the metal insulator transition

Abstract

All Science Journal Classification (ASJC) codes

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