Nonlinear properties of Ge ion-implanted photonic crystals

M. Ajgaonkar; Y. Zhang; H. Grebel; R. Brown

Nonlinear properties of Ge ion-implanted photonic crystals

M. Ajgaonkar, Y. Zhang, H. Grebel, R. Brown

Research output: Contribution to conference › Paper › peer-review

Abstract

The linear and nonlinear optical properties of Ge implanted, ordered array of nanosize silica spheres (opals) were experimentally studied. Ge or, Er implanted opals did not exhibit an apparent damage after annealing at 1100°C. White light experiments also confirmed that the structure remained intact after the ion implantation process.

Original language	English (US)
Pages	306-307
Number of pages	2
State	Published - 2000
Event	Quantum Electronics and Laser Science Conference (QELS 2000) - San Francisco, CA, USA Duration: May 7 2000 → May 12 2000

Conference

Conference	Quantum Electronics and Laser Science Conference (QELS 2000)
City	San Francisco, CA, USA
Period	5/7/00 → 5/12/00

All Science Journal Classification (ASJC) codes

Physics and Astronomy(all)

Cite this

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title = "Nonlinear properties of Ge ion-implanted photonic crystals",

abstract = "The linear and nonlinear optical properties of Ge implanted, ordered array of nanosize silica spheres (opals) were experimentally studied. Ge or, Er implanted opals did not exhibit an apparent damage after annealing at 1100°C. White light experiments also confirmed that the structure remained intact after the ion implantation process.",

author = "M. Ajgaonkar and Y. Zhang and H. Grebel and R. Brown",

year = "2000",

language = "English (US)",

pages = "306--307",

note = "Quantum Electronics and Laser Science Conference (QELS 2000) ; Conference date: 07-05-2000 Through 12-05-2000",

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TY - CONF

T1 - Nonlinear properties of Ge ion-implanted photonic crystals

AU - Ajgaonkar, M.

AU - Zhang, Y.

AU - Grebel, H.

AU - Brown, R.

PY - 2000

Y1 - 2000

N2 - The linear and nonlinear optical properties of Ge implanted, ordered array of nanosize silica spheres (opals) were experimentally studied. Ge or, Er implanted opals did not exhibit an apparent damage after annealing at 1100°C. White light experiments also confirmed that the structure remained intact after the ion implantation process.

AB - The linear and nonlinear optical properties of Ge implanted, ordered array of nanosize silica spheres (opals) were experimentally studied. Ge or, Er implanted opals did not exhibit an apparent damage after annealing at 1100°C. White light experiments also confirmed that the structure remained intact after the ion implantation process.

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UR - http://www.scopus.com/inward/citedby.url?scp=0034546054&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:0034546054

SP - 306

EP - 307

T2 - Quantum Electronics and Laser Science Conference (QELS 2000)

Y2 - 7 May 2000 through 12 May 2000

ER -

Nonlinear properties of Ge ion-implanted photonic crystals

Abstract

Conference

All Science Journal Classification (ASJC) codes

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