Nonlinear properties of Ge ion-implanted photonic crystals

M. Ajgaonkar; Y. Zhang; Haim Grebel; R. Brown

Nonlinear properties of Ge ion-implanted photonic crystals

M. Ajgaonkar, Y. Zhang, Haim Grebel, R. Brown

Research output: Contribution to journal › Article › peer-review

Abstract

The linear and nonlinear optical properties of Ge implanted, ordered array of nanosize silica spheres (opals) were experimentally studied. Ge or, Er implanted opals did not exhibit an apparent damage after annealing at 1100°C. White light experiments also confirmed that the structure remained intact after the ion implantation process.

Original language	English (US)
Pages (from-to)	306-307
Number of pages	2
Journal	Conference on Quantum Electronics and Laser Science (QELS) - Technical Digest Series
State	Published - Dec 1 2000

All Science Journal Classification (ASJC) codes

Physics and Astronomy(all)

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title = "Nonlinear properties of Ge ion-implanted photonic crystals",

abstract = "The linear and nonlinear optical properties of Ge implanted, ordered array of nanosize silica spheres (opals) were experimentally studied. Ge or, Er implanted opals did not exhibit an apparent damage after annealing at 1100°C. White light experiments also confirmed that the structure remained intact after the ion implantation process.",

author = "M. Ajgaonkar and Y. Zhang and Haim Grebel and R. Brown",

year = "2000",

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language = "English (US)",

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T1 - Nonlinear properties of Ge ion-implanted photonic crystals

AU - Ajgaonkar, M.

AU - Zhang, Y.

AU - Grebel, Haim

AU - Brown, R.

PY - 2000/12/1

Y1 - 2000/12/1

N2 - The linear and nonlinear optical properties of Ge implanted, ordered array of nanosize silica spheres (opals) were experimentally studied. Ge or, Er implanted opals did not exhibit an apparent damage after annealing at 1100°C. White light experiments also confirmed that the structure remained intact after the ion implantation process.

AB - The linear and nonlinear optical properties of Ge implanted, ordered array of nanosize silica spheres (opals) were experimentally studied. Ge or, Er implanted opals did not exhibit an apparent damage after annealing at 1100°C. White light experiments also confirmed that the structure remained intact after the ion implantation process.

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JO - Conference on Quantum Electronics and Laser Science (QELS) - Technical Digest Series

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