Nonradiative recombination mechanism in phosphor-free gan-based nanowire white light emitting diodes and the effect of ammonium sulfide surface Passivation

H. P.T. Nguyen, M. Djavid, Z. Mi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

16 Scopus citations

Abstract

We report on a detailed investigation of nonradiative recombination processes in InGaN/GaN dot-in-a-wire white light emitting diodes (LEDs) grown by molecular beam epitaxy. It is observed that, for such nanowire LEDs, the peak quantum efficiency occurs at relatively high injection current levels of >100 A/cm2, compared to those of conventional InGaN/GaN quantum well blue LEDs. Through detailed simulation studies, it is concluded that, Shockley-Read-Hall nonradiative recombination, due to the presence of surface states and defects, plays a dominant role on the nanowire LED performance. We have further shown that such nonradiative recombination can be greatly reduced when the nanowire LEDs are treated by ammonium sulfide solution ((NH 4)2Sx, 40-48% concentration), which can lead to a much faster increasing trend of quantum efficiency vs. injection current, compared to the unpassivated devices.

Original languageEnglish (US)
Title of host publicationWide-Bandgap Semiconductor Materials and Devices 14
Pages93-100
Number of pages8
Edition2
DOIs
StatePublished - Oct 21 2013
Externally publishedYes
EventWide-Bandgap Semiconductor Materials and Devices 14 - 223rd ECS Meeting - Toronto, ON, Canada
Duration: May 12 2013May 16 2013

Publication series

NameECS Transactions
Number2
Volume53
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Other

OtherWide-Bandgap Semiconductor Materials and Devices 14 - 223rd ECS Meeting
CountryCanada
CityToronto, ON
Period5/12/135/16/13

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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