Abstract
Of the numerous beyond complementary metal-oxide semiconductor (CMOS) devices investigated, the magnetoelectric field effect transistor (MEFET) has shown promise as a high-speed and low-power device in both logic and memory applications. We here discuss several memory bit-cell and array design options that utilize the nonvolatile features of the MEFET. With correct codesign of the device, cell, array levels, and sense FET, such designs are promising candidates for on-chip non-volatile RAM substitution.
| Original language | English (US) |
|---|---|
| Title of host publication | Advances in Semiconductor Technologies |
| Subtitle of host publication | Selected Topics Beyond Conventional CMOS |
| Publisher | Wiley-Blackwell |
| Pages | 79-92 |
| Number of pages | 14 |
| ISBN (Electronic) | 9781119869610 |
| ISBN (Print) | 9781119869603 |
| State | Published - Sep 30 2022 |
All Science Journal Classification (ASJC) codes
- General Engineering
- General Materials Science
Keywords
- Benchmarking
- Beyond CMOS
- Magnetoelectric
- Memory