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Nonvolatile memory based architectures using magnetoelectric FETs
Shaahin Angizi
, Deliang Fan
, Andrew Marshall
, Peter A. Dowben
Electrical and Computer Engineering
Research output
:
Chapter in Book/Report/Conference proceeding
›
Chapter
2
Scopus citations
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Keyphrases
Non-volatile Memory
100%
Field-effect Transistors
100%
Magnetoelectric
100%
Magnetoelectric Fields
100%
Processing-In-Memory Architectures
100%
Non-volatile
50%
Design Decisions
50%
On chip
50%
Complementary Metal Oxide Semiconductor
50%
Array Design
50%
Metal-oxide-semiconductor Devices
50%
Memory Application
50%
Low-power Devices
50%
Logic Application
50%
Speed-power
50%
Cell Design
50%
Bitcell
50%
Nonvolatile RAM (NVRAM)
50%
SenseFET
50%
Bit Array
50%
Cell Array
50%
Material Science
Field Effect Transistor
100%
Complementary Metal-Oxide-Semiconductor Device
25%
Power Device
25%