Novel fabrication of C-doped base InGaAs/InP DHBT structures for high speed circuit applications

R. F. Kopf; R. A. Hamm; R. J. Malik; R. W. Ryan; J. Burm; A. Tate; Y. K. Chen; G. Georgiou; D. V. Lang; M. Geva; F. Ren

doi:10.1016/S0038-1101(98)00221-4

Novel fabrication of C-doped base InGaAs/InP DHBT structures for high speed circuit applications

R. F. Kopf, R. A. Hamm, R. J. Malik, R. W. Ryan, J. Burm, A. Tate, Y. K. Chen, G. Georgiou, D. V. Lang, M. Geva, F. Ren

Research output: Contribution to journal › Article › peer-review

8 Scopus citations

Abstract

We have fabricated InGaAs/InP based DHBTs for high speed circuit applications. A process involving both wet chemical and ECR plasma etching was developed. Carbon was employed as the p-type dopant of the base layer for excellent device stability. Both the emitter-base and base-collector regions were graded using quaternary InGaAsP alloys. The extrinsic emitter-base junction is buried for junction passivation to improve device reliability. The use of an InP collector structure with the graded region results in high breakdown voltages of 8-10 V, with no current blocking. The entire structure is encapsulated with spin-on-glass. These devices show no degradation in d.c. characteristics after operation at an emitter current density of 90 kA cm^-2 and a collector bias, V_CE, of 2 V at room temperature for over 500 h. Typical common emitter current gain was 50. An f_t, of 80 and f_max of 155 GHz were achieved for 2 x 4 μm² emitter size devices.

Original language	English (US)
Pages (from-to)	2239-2250
Number of pages	12
Journal	Solid-State Electronics
Volume	42
Issue number	12
DOIs	https://doi.org/10.1016/S0038-1101(98)00221-4
State	Published - Dec 1998
Externally published	Yes

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Materials Chemistry
Electrical and Electronic Engineering

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10.1016/S0038-1101(98)00221-4

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title = "Novel fabrication of C-doped base InGaAs/InP DHBT structures for high speed circuit applications",

abstract = "We have fabricated InGaAs/InP based DHBTs for high speed circuit applications. A process involving both wet chemical and ECR plasma etching was developed. Carbon was employed as the p-type dopant of the base layer for excellent device stability. Both the emitter-base and base-collector regions were graded using quaternary InGaAsP alloys. The extrinsic emitter-base junction is buried for junction passivation to improve device reliability. The use of an InP collector structure with the graded region results in high breakdown voltages of 8-10 V, with no current blocking. The entire structure is encapsulated with spin-on-glass. These devices show no degradation in d.c. characteristics after operation at an emitter current density of 90 kA cm-2 and a collector bias, VCE, of 2 V at room temperature for over 500 h. Typical common emitter current gain was 50. An ft, of 80 and fmax of 155 GHz were achieved for 2 x 4 μm2 emitter size devices.",

author = "Kopf, {R. F.} and Hamm, {R. A.} and Malik, {R. J.} and Ryan, {R. W.} and J. Burm and A. Tate and Chen, {Y. K.} and G. Georgiou and Lang, {D. V.} and M. Geva and F. Ren",

year = "1998",

month = dec,

doi = "10.1016/S0038-1101(98)00221-4",

language = "English (US)",

volume = "42",

pages = "2239--2250",

journal = "Solid-State Electronics",

issn = "0038-1101",

publisher = "Elsevier Ltd",

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TY - JOUR

T1 - Novel fabrication of C-doped base InGaAs/InP DHBT structures for high speed circuit applications

AU - Kopf, R. F.

AU - Hamm, R. A.

AU - Malik, R. J.

AU - Ryan, R. W.

AU - Burm, J.

AU - Tate, A.

AU - Chen, Y. K.

AU - Georgiou, G.

AU - Lang, D. V.

AU - Geva, M.

AU - Ren, F.

PY - 1998/12

Y1 - 1998/12

N2 - We have fabricated InGaAs/InP based DHBTs for high speed circuit applications. A process involving both wet chemical and ECR plasma etching was developed. Carbon was employed as the p-type dopant of the base layer for excellent device stability. Both the emitter-base and base-collector regions were graded using quaternary InGaAsP alloys. The extrinsic emitter-base junction is buried for junction passivation to improve device reliability. The use of an InP collector structure with the graded region results in high breakdown voltages of 8-10 V, with no current blocking. The entire structure is encapsulated with spin-on-glass. These devices show no degradation in d.c. characteristics after operation at an emitter current density of 90 kA cm-2 and a collector bias, VCE, of 2 V at room temperature for over 500 h. Typical common emitter current gain was 50. An ft, of 80 and fmax of 155 GHz were achieved for 2 x 4 μm2 emitter size devices.

AB - We have fabricated InGaAs/InP based DHBTs for high speed circuit applications. A process involving both wet chemical and ECR plasma etching was developed. Carbon was employed as the p-type dopant of the base layer for excellent device stability. Both the emitter-base and base-collector regions were graded using quaternary InGaAsP alloys. The extrinsic emitter-base junction is buried for junction passivation to improve device reliability. The use of an InP collector structure with the graded region results in high breakdown voltages of 8-10 V, with no current blocking. The entire structure is encapsulated with spin-on-glass. These devices show no degradation in d.c. characteristics after operation at an emitter current density of 90 kA cm-2 and a collector bias, VCE, of 2 V at room temperature for over 500 h. Typical common emitter current gain was 50. An ft, of 80 and fmax of 155 GHz were achieved for 2 x 4 μm2 emitter size devices.

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DO - 10.1016/S0038-1101(98)00221-4

M3 - Article

AN - SCOPUS:0032295453

SN - 0038-1101

VL - 42

SP - 2239

EP - 2250

JO - Solid-State Electronics

JF - Solid-State Electronics

IS - 12

ER -

Novel fabrication of C-doped base InGaAs/InP DHBT structures for high speed circuit applications

Abstract

All Science Journal Classification (ASJC) codes

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