Abstract
We have fabricated in InGaAs/InP based DHBTs for high speed circuit applications. A process involving both wet chemical and ECR plasma etching was developed. Carbon was employed as the p-type dopant of the base layer for excellent device stability. Both the emitter-base and base-collector regions were graded using quaternary InGaAsP alloys. The extrinsic emitter-base junction is buried for junction passivation to improve device reliability. The use of an InP collector structure with the graded region results in high breakdown voltages of 8 V to 10 V, with no current blocking. The entire structure is encapsulated with spin-on-glass. These devices show no degradation in DC characteristics after operation at an emitter current density of 90 kA/cm2 and a collector bias, VCE, of 2 V at room temperature for over 500 hours. Typical common emitter current gain was 50. An ft of 80 and fmax of 155 GHz were achieved for 2×4 μm2 emitter size devices.
Original language | English (US) |
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Pages (from-to) | 413-424 |
Number of pages | 12 |
Journal | Materials Research Society Symposium - Proceedings |
Volume | 483 |
DOIs | |
State | Published - 1997 |
Externally published | Yes |
Event | Proceedings of the 1997 Fall MRS Symposium - Boston, MA, USA Duration: Dec 1 1997 → Dec 4 1997 |
All Science Journal Classification (ASJC) codes
- General Materials Science
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering