Novel fabrication of C-doped base InGaAs/InP DHBT structures for high speed circuit applications

R. F. Kopf; R. A. Hamm; R. J. Malik; R. W. Ryan; J. Burm; A. Tate; Y. K. Chen; G. Georgiou; D. V. Lang; M. Geva; F. Pen

doi:10.1557/proc-483-413

Novel fabrication of C-doped base InGaAs/InP DHBT structures for high speed circuit applications

R. F. Kopf
, R. A. Hamm
, R. J. Malik
, R. W. Ryan
, J. Burm
, A. Tate
, Y. K. Chen
, G. Georgiou
, D. V. Lang
, M. Geva
, F. Pen

Research output: Contribution to journal › Conference article › peer-review

Abstract

We have fabricated in InGaAs/InP based DHBTs for high speed circuit applications. A process involving both wet chemical and ECR plasma etching was developed. Carbon was employed as the p-type dopant of the base layer for excellent device stability. Both the emitter-base and base-collector regions were graded using quaternary InGaAsP alloys. The extrinsic emitter-base junction is buried for junction passivation to improve device reliability. The use of an InP collector structure with the graded region results in high breakdown voltages of 8 V to 10 V, with no current blocking. The entire structure is encapsulated with spin-on-glass. These devices show no degradation in DC characteristics after operation at an emitter current density of 90 kA/cm² and a collector bias, V_CE, of 2 V at room temperature for over 500 hours. Typical common emitter current gain was 50. An f_t of 80 and f_max of 155 GHz were achieved for 2×4 μm² emitter size devices.

Original language	English (US)
Pages (from-to)	413-424
Number of pages	12
Journal	Materials Research Society Symposium - Proceedings
Volume	483
DOIs	https://doi.org/10.1557/proc-483-413
State	Published - 1997
Externally published	Yes
Event	Proceedings of the 1997 Fall MRS Symposium - Boston, MA, USA Duration: Dec 1 1997 → Dec 4 1997

All Science Journal Classification (ASJC) codes

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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10.1557/proc-483-413

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@article{b4be9415ee6144eb98b02b43a1f995f9,

title = "Novel fabrication of C-doped base InGaAs/InP DHBT structures for high speed circuit applications",

abstract = "We have fabricated in InGaAs/InP based DHBTs for high speed circuit applications. A process involving both wet chemical and ECR plasma etching was developed. Carbon was employed as the p-type dopant of the base layer for excellent device stability. Both the emitter-base and base-collector regions were graded using quaternary InGaAsP alloys. The extrinsic emitter-base junction is buried for junction passivation to improve device reliability. The use of an InP collector structure with the graded region results in high breakdown voltages of 8 V to 10 V, with no current blocking. The entire structure is encapsulated with spin-on-glass. These devices show no degradation in DC characteristics after operation at an emitter current density of 90 kA/cm2 and a collector bias, VCE, of 2 V at room temperature for over 500 hours. Typical common emitter current gain was 50. An ft of 80 and fmax of 155 GHz were achieved for 2×4 μm2 emitter size devices.",

author = "Kopf, \{R. F.\} and Hamm, \{R. A.\} and Malik, \{R. J.\} and Ryan, \{R. W.\} and J. Burm and A. Tate and Chen, \{Y. K.\} and G. Georgiou and Lang, \{D. V.\} and M. Geva and F. Pen",

year = "1997",

doi = "10.1557/proc-483-413",

language = "English (US)",

volume = "483",

pages = "413--424",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

publisher = "Materials Research Society",

note = "Proceedings of the 1997 Fall MRS Symposium ; Conference date: 01-12-1997 Through 04-12-1997",

}

TY - JOUR

T1 - Novel fabrication of C-doped base InGaAs/InP DHBT structures for high speed circuit applications

AU - Kopf, R. F.

AU - Hamm, R. A.

AU - Malik, R. J.

AU - Ryan, R. W.

AU - Burm, J.

AU - Tate, A.

AU - Chen, Y. K.

AU - Georgiou, G.

AU - Lang, D. V.

AU - Geva, M.

AU - Pen, F.

PY - 1997

Y1 - 1997

N2 - We have fabricated in InGaAs/InP based DHBTs for high speed circuit applications. A process involving both wet chemical and ECR plasma etching was developed. Carbon was employed as the p-type dopant of the base layer for excellent device stability. Both the emitter-base and base-collector regions were graded using quaternary InGaAsP alloys. The extrinsic emitter-base junction is buried for junction passivation to improve device reliability. The use of an InP collector structure with the graded region results in high breakdown voltages of 8 V to 10 V, with no current blocking. The entire structure is encapsulated with spin-on-glass. These devices show no degradation in DC characteristics after operation at an emitter current density of 90 kA/cm2 and a collector bias, VCE, of 2 V at room temperature for over 500 hours. Typical common emitter current gain was 50. An ft of 80 and fmax of 155 GHz were achieved for 2×4 μm2 emitter size devices.

AB - We have fabricated in InGaAs/InP based DHBTs for high speed circuit applications. A process involving both wet chemical and ECR plasma etching was developed. Carbon was employed as the p-type dopant of the base layer for excellent device stability. Both the emitter-base and base-collector regions were graded using quaternary InGaAsP alloys. The extrinsic emitter-base junction is buried for junction passivation to improve device reliability. The use of an InP collector structure with the graded region results in high breakdown voltages of 8 V to 10 V, with no current blocking. The entire structure is encapsulated with spin-on-glass. These devices show no degradation in DC characteristics after operation at an emitter current density of 90 kA/cm2 and a collector bias, VCE, of 2 V at room temperature for over 500 hours. Typical common emitter current gain was 50. An ft of 80 and fmax of 155 GHz were achieved for 2×4 μm2 emitter size devices.

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UR - https://www.scopus.com/pages/publications/17344386831#tab=citedBy

U2 - 10.1557/proc-483-413

DO - 10.1557/proc-483-413

M3 - Conference article

AN - SCOPUS:17344386831

SN - 0272-9172

VL - 483

SP - 413

EP - 424

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

T2 - Proceedings of the 1997 Fall MRS Symposium

Y2 - 1 December 1997 through 4 December 1997

ER -

Novel fabrication of C-doped base InGaAs/InP DHBT structures for high speed circuit applications

Abstract

All Science Journal Classification (ASJC) codes

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